Nanocrystalline cubic silicon carbide films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at a low substrate temperature

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1367-1370 ◽  
Author(s):  
Y. Komura ◽  
A. Tabata ◽  
T. Narita ◽  
A. Kondo ◽  
T. Mizutani
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cubic Silicon Carbide

Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films

2005 ◽  
Vol 862 ◽  
Author(s):  
S. Miyajima ◽  
A. Yamada ◽  
M. Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Desorption ◽  
Hot Wire ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Vacuum Atmosphere ◽  
Cubic Silicon Carbide

AbstractAluminum-doped hydrogenated microcrystalline cubic silicon carbide (μc-3C-SiC:H) films deposited by the hot wire chemical vapor deposition technique at a low substrate temperature of about 300 °C were annealed at various temperatures in vacuum atmosphere. The increase in conductivity was observed on annealing the films over 400°C. The onset of hydrogen desorption occurred in the undoped films at about 650°C, while the onset was shifted towards lower temperatures in the case of Al-doped films. These results indicate that hydrogen plays an important role on the conductivity of the Al-doped μc-3C-SiC:H films.

Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

2011 ◽  
Vol 257 (8) ◽  
pp. 3320-3324 ◽  
Author(s):  
Su Kong Chong ◽  
Boon Tong Goh ◽  
Zarina Aspanut ◽  
Muhamad Rasat Muhamad ◽  
Chang Fu Dee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nanostructures ◽  
Hot Wire
Sign in / Sign up

Export Citation Format

Share Document