Influence of oxygen partial pressure on the properties of pulsed laser deposited nanocrystalline zirconia thin films

2011 ◽  
Vol 257 (20) ◽  
pp. 8506-8510 ◽  
Author(s):  
G. Balakrishnan ◽  
T.N. Sairam ◽  
P. Kuppusami ◽  
R. Thiumurugesan ◽  
E. Mohandas ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Nanocrystalline Zirconia

scholarly journals Oxygen partial pressure induced effects on the microstructure and the luminescence properties of pulsed laser deposited TiO2 thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015021 ◽  
Author(s):  
A. K. Kunti ◽  
K. C. Sekhar ◽  
Mario Pereira ◽  
M. J. M. Gomes ◽  
S. K. Sharma
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Luminescence Properties ◽  
Tio2 Thin Films

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Oxygen partial pressure effect on structural and electrical behavior of pulsed laser deposited Zn0.98Co0.02O thin films

2012 ◽  
Vol 135 (1) ◽  
pp. 174-180 ◽  
Author(s):  
K.C. Sekhar ◽  
A. Khodorov ◽  
A. Chahboun ◽  
S. Levichev ◽  
A. Almeida ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Effect ◽  
Pulsed Laser ◽  
Electrical Behavior

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

2003 ◽  
Vol 18 (8) ◽  
pp. 1753-1756 ◽  
Author(s):  
Woong Choi ◽  
Tim Sands
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Oxygen ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Grain Structures ◽  
Effect Of Oxygen

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

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