Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

1992 ◽  
Vol 285 ◽  
Author(s):  
S.H.H. Naqvi ◽  
M. Vickers ◽  
S. Tarling ◽  
P. Barnes ◽  
I.W. Boyd
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Ex Situ ◽  
Dc Resistivity ◽  
Basic Set ◽  
Zero Resistance ◽  
Van Der Pauw ◽  
First Time

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

scholarly journals Oxygen partial pressure induced effects on the microstructure and the luminescence properties of pulsed laser deposited TiO2 thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015021 ◽  
Author(s):  
A. K. Kunti ◽  
K. C. Sekhar ◽  
Mario Pereira ◽  
M. J. M. Gomes ◽  
S. K. Sharma
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Luminescence Properties ◽  
Tio2 Thin Films

Influence of oxygen partial pressure on the properties of pulsed laser deposited nanocrystalline zirconia thin films

2011 ◽  
Vol 257 (20) ◽  
pp. 8506-8510 ◽  
Author(s):  
G. Balakrishnan ◽  
T.N. Sairam ◽  
P. Kuppusami ◽  
R. Thiumurugesan ◽  
E. Mohandas ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Nanocrystalline Zirconia

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Resistivity measurement of an a-axis-oriented YBa2Cu3O7–δ thin film at 450-650 °C

1993 ◽  
Vol 8 (4) ◽  
pp. 705-708 ◽  
Author(s):  
Toshio Usui ◽  
Akira Oishi ◽  
Hidekazu Teshima ◽  
Kazumi Ohata ◽  
Tadataka Morishita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ybco Film ◽  
Resistivity Measurement ◽  
Ambient Atmosphere ◽  
Reversible Change ◽  
Superconducting Properties ◽  
Ybco Thin Film

Resistivity measurement of an a-axis-oriented YBa2Cu3O7-δ (YBCO) thin film was carried out in a stream of O2/Ar mixtures at 450–650 °C. Rapidly reversible change in the resistivity of the YBCO film was observed as a function of the oxygen partial pressure in the ambient atmosphere due to the oxygen in-/out-diffusion in the YBCO film. Resistivity measurement of YBCO thin films at higher temperatures of 450–650 °C was found to be quite effective to predict the influence of fabricating processes on the superconducting properties of YBCO films.

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