Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

2012 ◽  
Vol 258 (24) ◽  
pp. 9751-9755 ◽  
Author(s):  
Fei Yang ◽  
Ling Xu ◽  
Rui Zhang ◽  
Lei Geng ◽  
Liang Tong ◽  
...  
Nature ◽  
1992 ◽  
Vol 359 (6391) ◽  
pp. 133-135 ◽  
Author(s):  
R. M. Overney ◽  
E. Meyer ◽  
J. Frommer ◽  
D. Brodbeck ◽  
R. Lüthi ◽  
...  

1994 ◽  
Vol 33 (Part 1, No. 3A) ◽  
pp. 1390-1393 ◽  
Author(s):  
Min-Kun Bae ◽  
Toshihisa Horiuchi ◽  
Kazuhiro Hara ◽  
Yoshihiro Ishibashi ◽  
Kazumi Matsushige

2004 ◽  
Vol 13 (5) ◽  
pp. 977-982 ◽  
Author(s):  
Q He ◽  
W M Huang ◽  
M H Hong ◽  
M J Wu ◽  
Y Q Fu ◽  
...  

2008 ◽  
Vol 8 (9) ◽  
pp. 4757-4760 ◽  
Author(s):  
Yong-il Kim ◽  
Hyunsook Kim ◽  
Haiwon Lee

AMF anodization lithography was performed on organic thin films with conducting polymers which is poly(3,4-ethylenedioxythiophene). The conductivity of PEDOT thin films was changed by different dopants and organic solvents. Two different dopants are poly(4-styrenesulfonate) and di(2-ethylhexyl)-sulfosuccinate. Also, DMF and IPA were used to prepare the PEDOT thin films doped with PSS and DEHS on silicon surface. The conductivities of these PEDOT variants were compared by obtaining their I–V curves between tip and thin films using AFM. Silicon oxide nanopatterns with higher aspect ratios can be obtained from the films with higher conductivity.


2014 ◽  
Vol 26 (35) ◽  
pp. 6069-6073 ◽  
Author(s):  
Duc T. Duong ◽  
Hung Phan ◽  
David Hanifi ◽  
Pil Sung Jo ◽  
Thuc-Quyen Nguyen ◽  
...  

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