The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

2012 ◽  
Vol 258 (24) ◽  
pp. 9891-9895 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
C.H. Chang ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Optoelectronic Properties ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Structural And Optoelectronic Properties

Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

2013 ◽  
Vol 39 (5) ◽  
pp. 5795-5803 ◽  
Author(s):  
Y.C. Lin ◽  
C.Y. Hsu ◽  
S.K. Hung ◽  
D.C. Wen
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno ◽  
Tio2 Buffer Layer

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Experimental and ab-initio investigation of the microstructure and optoelectronic properties of FCM–CVD-prepared Al-doped ZnO thin films

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Ilyass Jellal ◽  
Hassan Ahmoum ◽  
Yassine Khaaissa ◽  
Khalid Nouneh ◽  
Mourad Boughrara ◽  
...  
Keyword(s):  
Thin Films ◽  
Ab Initio ◽  
Optoelectronic Properties ◽  
Zno Thin Films ◽  
Doped Zno

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

scholarly journals Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering

Materials ◽  
2016 ◽  
Vol 9 (12) ◽  
pp. 987 ◽  
Author(s):  
Shien-Uang Jen ◽  
Hui Sun ◽  
Hai-Pang Chiang ◽  
Sheng-Chi Chen ◽  
Jian-Yu Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Optoelectronic Properties ◽  
Zno Thin Films ◽  
Electrical Stability ◽  
Radio Frequency Sputtering ◽  
Doped Zno
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