Room temperature pulsed laser deposited ZnO thin films as photoluminiscence gas sensors

2012 ◽  
Vol 259 ◽  
pp. 806-810 ◽  
Author(s):  
D. Padilla-Rueda ◽  
J.M. Vadillo ◽  
J.J. Laserna
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zno Thin Films

scholarly journals Effect of SiO2 ratio on electrical Properties of SiO2:ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

2019 ◽  
Vol 23 (10) ◽  
pp. 76
Author(s):  
Abdul-Majeed E. Al-Samarai1 ◽  
Zuheer. N. Majeed1 ◽  
Ghuson. H.Mohammed2
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Laser Pulse ◽  
Silicon Dioxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zno Thin Films ◽  
Pulse Deposition

In this paper zinc oxide was dopped by various concentrations (5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×1018cm-3) to (14.29× 1018cm-3 ) before annealing and from (0.30×1016cm-3) to (26.25×1016cm-3) after annealing. The mobility decreases from(2.3cm2/v. sec) to (0.99cm2/v. sec) before annealing and from (7cm2/v. sec) to (2.5cm2/v . sec).   http://dx.doi.org/10.25130/tjps.23.2018.173  

Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

2006 ◽  
Vol 35 (4) ◽  
pp. 635-640 ◽  
Author(s):  
W. Y. Shim ◽  
K. A. Jeon ◽  
K. I. Lee ◽  
S. Y. Lee ◽  
M. H. Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Ferromagnetic Ordering ◽  
Mn Doped

scholarly journals Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser Deposition

2009 ◽  
Vol 46 (1) ◽  
pp. 44-48
Author(s):  
B. Polyakov ◽  
A. Petruhin ◽  
L. Grigorjeva ◽  
P. Kulis ◽  
I. Tale
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electric Conductivity ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Rapid Annealing ◽  
High Electric Conductivity

Rapid Annealing of Black ZnO Thin Films Prepared by Pulsed Laser DepositionZnO thin films were deposited by pulsed laser deposition (fluence 2.2 J/cm2) in vacuum on different substrates kept at room temperature. This temperature allowed for fast film growing, however the as-prepared films had low transparency. To improve this optical property, keeping up at the same time the high electric conductivity of the films, post-annealing procedures in vacuum and in air were carried out. The influence of these procedures on the optical absorption, photoluminescence and electrical properties has been investigated. It is shown that the annealing in air improves only the transparency of such a film, however its conductivity decreases markedly. In turn, vacuum annealing for 3 min. at 600° C results in better transparency of the films, with their electric conductivity kept high.

Room-temperature cathodoluminescence of n-type ZnO thin films grown by pulsed laser deposition in N2, N2O, and O2 background gas

2005 ◽  
Vol 486 (1-2) ◽  
pp. 205-209 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
J. Lenzner ◽  
T. Nobis ◽  
G. Zimmermann ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Background Gas

EFFECTS OF SUBSTRATE TEMPERATURE ON STRUCTURAL, OPTICAL AND SURFACE MORPHOLOGICAL PROPERTIES OF PULSED LASER DEPOSITED ZnO THIN FILMS

2013 ◽  
Vol 20 (03n04) ◽  
pp. 1350032 ◽  
Author(s):  
KHALIQ MAHMOOD ◽  
SHAZIA BASHIR ◽  
M. KHALEEQ-UR-RAHMAN ◽  
NAZAR FARID ◽  
MAHREEN AKRAM ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Morphological Properties ◽  
Zno Thin Films ◽  
Atomic Force

The effect of substrate temperature on the structural, optical and morphological properties of ZnO thin films has been investigated. ZnO thin films were deposited on quartz substrate for various temperatures ranging from room temperature to 250°C by pulsed laser deposition (PLD) technique. Nd:YAG laser (532 nm, 100 mJ, 6 ns, 10 Hz) with corresponding fluence of 6 J/cm2 was employed for the ablation of ZnO target. Characterization of the thin films was carried out using X-ray diffraction (XRD), high resolution UV-visible spectrometer, atomic force microscope (AFM) and scanning electron microscope (SEM). From XRD analysis, the amorphous behaviors of films at room temperature and crystalline behavior along the preferred orientation of (002) is exhibited for higher substrate temperature. The transmittances of grown films increase with the increasing substrate temperature. The evaluated values of bandgap energies increase with increasing substrate temperature up to the range of 150°C and then monotonically decrease with the further increase in temperature. AFM and SEM analysis illustrates that the density and height of grains for deposited films increase significantly with increasing substrate temperature.

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