Effect of SiO2 ratio  on electrical Properties of SiO2:ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique

In this paper zinc oxide was dopped by various concentrations (5,10,15,20,25) % of silicon dioxide. The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films. The D.C conductivity showed a decrease in activation energy by increasing doping from (Ea1=0.096 eV) to (Ea1=0.075 eV) before annealing and after annealing from (Ea1=0.048 eV) to(Ea1=0.027 eV). Hall effect showed that the concentration of carriers increases from (2.79 ×1018cm-3) to (14.29× 1018cm-3 ) before annealing and from (0.30×1016cm-3) to (26.25×1016cm-3) after annealing. The mobility decreases from(2.3cm2/v. sec) to (0.99cm2/v. sec) before annealing and from (7cm2/v. sec) to (2.5cm2/v . sec). http://dx.doi.org/10.25130/tjps.23.2018.173

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Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v14i29.218 ◽

2019 ◽

Vol 14 (29) ◽

pp. 37-43 ◽

Cited By ~ 1

Author(s):

Raied K. Jamal

Keyword(s):

Thin Films ◽

Activation Energy ◽

Electrical Properties ◽

Transport Mechanism ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Concentration Increase ◽

Annealing Temperatures ◽

P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

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Effects of laser pulse energy on the structural, optical and electrical properties of pulsed laser deposited Ga-doped ZnO thin films

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-019-01646-w ◽

2019 ◽

Vol 30 (13) ◽

pp. 12804-12811 ◽

Cited By ~ 3

Author(s):

Guankong Mo ◽

Zimei Tang ◽

Huan He ◽

Jiahui Liu ◽

Yuechun Fu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Laser Pulse ◽

Pulse Energy ◽

Laser Pulse Energy ◽

Pulsed Laser ◽

Zno Thin Films ◽

Optical And Electrical Properties ◽

Doped Zno

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Effect of deposition rate on the structural, optical and electrical properties of Zinc oxide (ZnO) thin films prepared by spray pyrolysis technique

Optik ◽

10.1016/j.ijleo.2015.06.025 ◽

2015 ◽

Vol 126 (20) ◽

pp. 2481-2484 ◽

Cited By ~ 14

Author(s):

Yacine Aoun ◽

Boubaker Benhaoua ◽

Said Benramache ◽

Brahim Gasmi

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Electrical Properties ◽

Spray Pyrolysis ◽

Deposition Rate ◽

Spray Pyrolysis Technique ◽

Zno Thin Films ◽

Optical And Electrical Properties

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Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2008.06.026 ◽

2008 ◽

Vol 202 (22-23) ◽

pp. 5467-5470 ◽

Cited By ~ 17

Author(s):

Norihiro Sakai ◽

Yoshihiro Umeda ◽

Fumiaki Mitsugi ◽

Tomoaki Ikegami

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films

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Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

Advances in Condensed Matter Physics ◽

10.1155/2013/970976 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

M. Acosta ◽

I. Riech ◽

E. Martín-Tovar

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Band Gap ◽

Room Temperature ◽

Optical Band Gap ◽

Rf Sputtering ◽

Argon Pressure ◽

Band Gaps ◽

Zno Thin Films ◽

Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

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