Field emission properties of the caterpillar-like structural carbon film grown by magnetic and electric fields coupling HFCVD

2017 ◽  
Vol 423 ◽  
pp. 788-792 ◽  
Author(s):  
Yijia Wang ◽  
Qiuping Wei ◽  
Zhiming Yu ◽  
Hangyu Long ◽  
Zejun Deng ◽  
...  
2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.


2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.


1995 ◽  
Vol 416 ◽  
Author(s):  
W. Zhu ◽  
G. P. Kochanski ◽  
S. Jin

ABSTRACTWe have developed both experimental and numerical methods to collect and analyze field emission data from diamond samples. The diamond emitters are either films prepared by low pressure chemical vapor deposition (CVD) or powders synthesized by traditional high pressure high temperature (HPHT) processes. We established a strong correlation between the electric field required for emission and the defect densities in undoped or p-type doped diamond. We further found that ultrafine diamond particulate emitters offer substantially enhanced electron field emission properties at low electric fields compared to CVD diamond emitters. When subject to appropriate processing schemes, the particulate diamond emitters exhibit extremely low emission fields, typically 1-5 V/μm for a current density of 10 mA/cm2. These are believed to be the lowest-voltage field emitters ever reported.


2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  

2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

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