Two-dimensional ordered growth of InAs nanowires assisted by randomly deposited silver nanoparticles on a topographically modified surface by a focused ion beam

2019 ◽  
Vol 493 ◽  
pp. 271-278
Author(s):  
R. Ribeiro-Andrade ◽  
T.L. Vasconcelos ◽  
R.M.S. Kawabata ◽  
M.P. Pires ◽  
P.L. Souza ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Inas Nanowires ◽  
Modified Surface

Local modifications of magnetism and structure in FePt (001) epitaxial thin films by focused ion beam: Two-dimensional perpendicular patterns

2008 ◽  
Vol 104 (5) ◽  
pp. 053907 ◽  
Author(s):  
F. Albertini ◽  
L. Nasi ◽  
F. Casoli ◽  
S. Fabbrici ◽  
P. Luches ◽  
...  
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Epitaxial Thin Films ◽  
Two Dimensional

Focused ion beam lithography for two dimensional array structures for photonic applications

2005 ◽  
Vol 78-79 ◽  
pp. 11-15 ◽  
Author(s):  
S. Cabrini ◽  
A. Carpentiero ◽  
R. Kumar ◽  
L. Businaro ◽  
P. Candeloro ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Dimensional Array ◽  
Ion Beam Lithography ◽  
Array Structures

Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

1992 ◽  
Vol 283 ◽  
Author(s):  
M. M. Faye ◽  
L. Laanab ◽  
J. Beauvillain ◽  
A. Claverie ◽  
C. Vieu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Cross Sectional ◽  
Quantum Nanostructures ◽  
Transmission Electron ◽  
Ion Beam Implantation ◽  
General Method

ABSTRACTA general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

scholarly journals Detection of Silver Nanoparticles inside Marine Diatom Thalassiosira pseudonana by Electron Microscopy and Focused Ion Beam

PLoS ONE ◽  
2014 ◽  
Vol 9 (5) ◽  
pp. e96078 ◽  
Author(s):  
César Pascual García ◽  
Alina D. Burchardt ◽  
Raquel N. Carvalho ◽  
Douglas Gilliland ◽  
Diana C. António ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silver Nanoparticles ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Thalassiosira Pseudonana ◽  
Marine Diatom

TWO-DIMENSIONAL ORDERED POROUS STRUCTURES FOR PHOTONIC CRYSTALS OBTAINED USING DEEP ANODIC ETCHING AND FOCUSED ION BEAM TECHNIQUES

2004 ◽  
Vol 03 (01n02) ◽  
pp. 81-85
Author(s):  
E. Yu. GAVRILIN ◽  
Yu. B. GORBATOV ◽  
V. V. STARKOV ◽  
A. F. VYATKIN
Keyword(s):  
Photonic Crystals ◽  
Plasma Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Visible Region ◽  
Two Dimensional ◽  
Porous Structures ◽  
Ordered Structure ◽  
Anodic Etching ◽  
Ordered Porous

Photonic crystals are the very promising novel materials for micro- and nanophotonics for visible region. To produce photonic crystals for this region of light, artificial structures with characteristic sizes less than 1 μm have to be manufactured. Electrochemical deep anodic etching and plasma etching techniques is normally used to produce such structures in silicon wafers. However, standard way of deep anodic etching realization is not suitable for sub-micrometer porous silicon formation. In the present work combination of the deep anodic etching and focused ion beam techniques is used to produce ordered structure of macropores in silicon.

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