Two-Dimensional and 3-Dimensional Analysis of Bone/Dental Implant Interfaces With the Use of Focused Ion Beam and Electron Microscopy

2007 ◽  
Vol 65 (4) ◽  
pp. 737-747 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Daniel Phifer ◽  
Nicholas J. Giannuzzi ◽  
Mario J. Capuano
Keyword(s):  
Electron Microscopy ◽  
Dimensional Analysis ◽  
Dental Implant ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
3 Dimensional

Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

1992 ◽  
Vol 283 ◽  
Author(s):  
M. M. Faye ◽  
L. Laanab ◽  
J. Beauvillain ◽  
A. Claverie ◽  
C. Vieu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Cross Sectional ◽  
Quantum Nanostructures ◽  
Transmission Electron ◽  
Ion Beam Implantation ◽  
General Method

ABSTRACTA general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

scholarly journals Correlative Organelle Microscopy: fluorescence guided volume electron microscopy of intracellular processes

2021 ◽  
Author(s):  
Sergey Loginov ◽  
Job Fermie ◽  
Jantina Fokkema ◽  
Alexandra V Agronskaia ◽  
Cecilia de Heus ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Light And Electron Microscopy ◽  
Temporal Organization ◽  
Data Sets ◽  
3 Dimensional ◽  
Cellular Physiology ◽  
3D Fluorescence Microscopy

Intracellular processes depend on a strict spatial and temporal organization of proteins and organelles. Directly linking molecular to nanoscale ultrastructural information is therefore crucial to understand cellular physiology. Volume or 3-dimensional (3D) correlative light and electron microscopy (volume-CLEM) holds unique potential to explore cellular physiology at high-resolution ultrastructural detail across cell volumes. Application of volume-CLEM is however hampered by limitations in throughput and 3D correlation efficiency. Addressing these limitations, we here describe a novel pipeline for volume-CLEM that provides high-precision (<100nm) registration between 3D fluorescence microscopy (FM) and 3D electron microscopy (EM) data sets with significantly increased throughput. Using multi-modal fiducial nanoparticles that remain fluorescent in epoxy resins and a 3D confocal fluorescence microscope integrated in a Focused Ion Beam Scanning Electron Microscope (FIB.SEM), our approach uses FM to target extremely small volumes of even single organelles for imaging in volume-EM, and obviates the need for post correlation of big 3D datasets. We extend our targeted volume-CLEM approach to include live-cell imaging, adding information on the motility of intracellular membranes selected for volume-CLEM. We demonstrate the power of our approach by targeted imaging of rare and transient contact sites between endoplasmic reticulum (ER) and lysosomes within hours rather than days. Our data suggest that extensive ER-lysosome and mitochondria-lysosome interactions restrict lysosome motility, highlighting the unique capabilities of our integrated CLEM pipeline for linking molecular dynamic data to high-resolution ultrastructural detail in 3D.

Site Specific 2-D Implant Profiling Using FIB Assisted SCM

2002 ◽  
Author(s):  
Konrad Jarausch ◽  
John F. Richards ◽  
Lloyd Denney ◽  
Alex Guichard ◽  
Phillip E. Russell
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Two Dimensional ◽  
Semiconductor Technology ◽  
Site Specific ◽  
Analysis Techniques ◽  
Profiling Techniques

Abstract Advances in semiconductor technology are driving the need for new metrology and failure analysis techniques. Failures due to missing, or misregistered implants are particularly difficult to resolve. Two-dimensional implant profiling techniques such as scanning capacitance microscopy (SCM) rely on polish preparation, which makes reliably targeting sub 0.25 um structures nearly impossible.[1] Focused ion beam (FIB) machining is routinely used to prepare site-specific cross-sections for electron microscopy inspection; however, FIB induced artifacts such as surface amorphization and Ga ion implantation render the surface incompatible with SCM (and selective etching techniques). This work describes a novel combination of FIB machining and polish preparation that allows for site-specific implant profiling using SCM.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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