A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility

2020 ◽  
Vol 534 ◽  
pp. 147607 ◽  
Author(s):  
Mohammed M. Obeid ◽  
Asadollah Bafekry ◽  
Sajid Ur Rehman ◽  
Chuong V. Nguyen
2020 ◽  
Vol 6 (6) ◽  
pp. eaay6407 ◽  
Author(s):  
Shiming Lei ◽  
Jingjing Lin ◽  
Yanyu Jia ◽  
Mason Gray ◽  
Andreas Topp ◽  
...  

Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V−1 s−1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers.


2021 ◽  
Author(s):  
Yifan Rao ◽  
Fusheng Zhang ◽  
Bao Zhu ◽  
Hui Li ◽  
Kai Zheng ◽  
...  

A type-II C2N/ZnSe heterostructure with strong light-absorption ability, high carrier mobility and low exciton binding energy, exhibits excellent photocatalytic water splitting performance


1998 ◽  
Vol 24 (1) ◽  
pp. 105-110 ◽  
Author(s):  
M.P. Mikhailova ◽  
T.I. Voronina ◽  
T.S. Lagunova ◽  
K.D. Moiseev ◽  
S.A. Obukhov ◽  
...  

2018 ◽  
Vol 97 (11) ◽  
Author(s):  
Cong-xin Xia ◽  
Juan Du ◽  
Xiao-wei Huang ◽  
Wen-bo Xiao ◽  
Wen-qi Xiong ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5827-5835 ◽  
Author(s):  
Cui Jin ◽  
Ying Dai ◽  
Wei Wei ◽  
Qilong Sun ◽  
Xinru Li ◽  
...  

Our present work provides a new promising material AsSb monlayer as the substrate for silicene with a negligible mismatch, sizable band gap and high carrier mobility.


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