Blue Phosphorene Nanosheets with Point Defects: Electronic Structure and Hydrogen Storage Capability

2021 ◽  
pp. 149363
Author(s):  
Daughty John ◽  
Bijoy Nharangatt ◽  
Srihari Madhav Kastaur ◽  
Raghu Chatanathodi
2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.


2015 ◽  
Vol 466 ◽  
pp. 539-550 ◽  
Author(s):  
L. Kniznik ◽  
P.R. Alonso ◽  
P.H. Gargano ◽  
G.H. Rubiolo

2020 ◽  
Vol 34 (17) ◽  
pp. 2050147
Author(s):  
Yuqin Guan ◽  
Qingyu Hou ◽  
Danyang Xia

The effect of intrinsic point defects on the electronic structure and absorption spectra of ZnO was investigated by first-principle calculation. Among the intrinsic point defects in ZnO, oxygen vacancies [Formula: see text] and interstitial zinc [Formula: see text] have the lower formation energy and the more stable structure under zinc(Zn)-rich condition, whereas zinc vacancies [Formula: see text] and interstitial oxygen [Formula: see text] have the lower formation energy and the more stable structure under oxygen(O)-rich condition. The band gap of [Formula: see text] becomes narrow and the absorption spectrum has a redshift. In the visible region, the photo-excited electron transition of [Formula: see text] is graded from the valence band top to the impurity level and then to the conduction band bottom, showing the redshift of absorption spectrum of [Formula: see text] and explaining the reason of [Formula: see text] forming a deep impurity levels in ZnO. Moreover, the impurity energy level of [Formula: see text] coincides with the Fermi level, indicating the significant trap effect and the slow recombination of electrons and holes, which are conducive to the design and preparation of novel ZnO photocatalysts. The band gap of [Formula: see text] and [Formula: see text] broadened and the absorption spectrum showed blueshift, explaining the different values of the ZnO band gap width.


2009 ◽  
Vol 384 (1) ◽  
pp. 61-69 ◽  
Author(s):  
Pankaj Nerikar ◽  
Taku Watanabe ◽  
James S. Tulenko ◽  
Simon R. Phillpot ◽  
Susan B. Sinnott

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Loku Singgappulige Rosantha Kumara ◽  
Osami Sakata ◽  
Hirokazu Kobayashi ◽  
Chulho Song ◽  
Shinji Kohara ◽  
...  

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