Doping Induced Indirect-to-Direct Bandgap Transition of Two-Dimensional Ga2O3

2021 ◽  
pp. 149458
Author(s):  
Xiangtai Liu Investigating ◽  
Kai Cheng ◽  
Ruiqi Li ◽  
Yifan Jia ◽  
Qin Lu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Direct Bandgap

The sp2 character of new two-dimensional AsB with tunable electronic properties predicted by theoretical studies

2019 ◽  
Vol 21 (37) ◽  
pp. 20981-20987
Author(s):  
Jie Zhang ◽  
Huijun Liu ◽  
Yun Gao ◽  
Xiaohong Xia ◽  
Zhongbing Huang
Keyword(s):  
Electronic Material ◽  
Electronic Properties ◽  
Layer Thickness ◽  
Single Layer ◽  
Theoretical Studies ◽  
Two Dimensional ◽  
Direct Bandgap ◽  
Stacking Order ◽  
Orbital Hybridization

We identify a semiconducting 2D electronic material, single-layer AsB, which has a suitable direct bandgap of 1.18 eV. Its frontiers state is sp2 orbital hybridization, which can be effectively tuned by layer thickness, stacking order and strain.

scholarly journals A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm2V−1s−1

Nano Energy ◽  
2016 ◽  
Vol 28 ◽  
pp. 433-439 ◽  
Author(s):  
Meiqiu Xie ◽  
Shengli Zhang ◽  
Bo Cai ◽  
Yong Huang ◽  
Yousheng Zou ◽  
...  
Keyword(s):  
Solar Cell ◽  
Two Dimensional ◽  
Direct Bandgap ◽  
Cell Donor

scholarly journals Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Zhi Gen Yu ◽  
Yongqing Cai ◽  
Yong-Wei Zhang
Keyword(s):  
Two Dimensional ◽  
Direct Bandgap

The Two-Dimensional AxCdxBi4–xQ6(A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

2017 ◽  
Vol 139 (20) ◽  
pp. 6978-6987 ◽  
Author(s):  
Jing Zhao ◽  
Saiful M. Islam ◽  
Oleg Y. Kontsevoi ◽  
Gangjian Tan ◽  
Constantinos C. Stoumpos ◽  
...  
Keyword(s):  
Ion Exchange ◽  
Two Dimensional ◽  
Direct Bandgap ◽  
Bandgap Semiconductors

scholarly journals Two-dimensional WS2/MoS2 Heterostructures: Properties and Applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Yichuan Chen ◽  
Mengtao Sun
Keyword(s):  
Scientific Investigation ◽  
Two Dimensional ◽  
Direct Bandgap

The successful fabrications of WS2/MoS2 heterostructures provide more sufficient possibilities for optoelectronic and thermoelectric applications than graphene, because of their direct bandgap characteristics; therefore, scientific investigation on WS2/MoS2 heterostructures becomes...

Recent advances in doping engineering of black phosphorus

2020 ◽  
Vol 8 (11) ◽  
pp. 5421-5441 ◽  
Author(s):  
Haiguo Hu ◽  
Zhe Shi ◽  
Karim Khan ◽  
Rui Cao ◽  
Weiyuan Liang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Anisotropic Structure ◽  
Direct Bandgap ◽  
2D Material ◽  
Recent Advances ◽  
In Doping ◽  
High Carrier Mobility ◽  
High Carrier

Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure and tunable direct bandgap.

scholarly journals Structural and Optoelectronic Properties of Two-Dimensional Ruddlesden–Popper Hybrid Perovskite CsSnBr3

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2119
Author(s):  
Guangbiao Xiang ◽  
Yanwen Wu ◽  
Yushuang Li ◽  
Chen Cheng ◽  
Jiancai Leng ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gaps ◽  
Two Dimensional ◽  
Band Structures ◽  
Direct Bandgap ◽  
Photoelectric Properties ◽  
Number Of Layers ◽  
Hybrid Perovskite ◽  
Calculation Results ◽  
Structural And Optoelectronic Properties

Ultrathin inorganic halogenated perovskites have attracted attention owing to their excellent photoelectric properties. In this work, we designed two types of Ruddlesden–Popper hybrid perovskites, Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2, and studied their band structures and band gaps as a function of the number of layers (n = 1–5). The calculation results show that Csn+1SnnBr3n+1 has a direct bandgap while the bandgap of CsnSnn+1Br3n+2 can be altered from indirect to direct, induced by the 5p-Sn state. As the layers increased from 1 to 5, the bandgap energies of Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2 decreased from 1.209 to 0.797 eV and 1.310 to 1.013 eV, respectively. In addition, the optical absorption of Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2 was blue-shifted as the structure changed from bulk to nanolayer. Compared with that of Csn+1SnnBr3n+1, the optical absorption of CsnSnn+1Br3n+2 was sensitive to the layers along the z direction, which exhibited anisotropy induced by the SnBr2-terminated surface.

Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Nano Research ◽  
2014 ◽  
Vol 7 (5) ◽  
pp. 694-703 ◽  
Author(s):  
Pingan Hu ◽  
Jia Zhang ◽  
Mina Yoon ◽  
Xiao-Fen Qiao ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Direct Bandgap ◽  
Highly Sensitive

Characterization of Few layer Tungsten diselenide based FET under Thermal Excitation

MRS Advances ◽  
2017 ◽  
Vol 2 (60) ◽  
pp. 3721-3726
Author(s):  
Avra S Bandyopadhyay ◽  
Gustavo A. Saenz ◽  
Anupama Kaul
Keyword(s):  
Optical Excitation ◽  
Optical Microscope ◽  
Thermal Excitation ◽  
Two Dimensional ◽  
Tungsten Diselenide ◽  
Back Gate ◽  
Direct Bandgap ◽  
Wide Range ◽  
Two Dimensional Materials

Abstract:Two-dimensional (2D) materials are very promising with respect to their integration into optoelectronic devices. Monolayer tungsten diselenide (WSe2) is a direct-gap semiconductor with a bandgap of ∼1.6eV, and is therefore a complement to other two-dimensional materials such as graphene, a gapless semimetal, and boron nitride, an insulator. The direct bandgap distinguishes monolayer WSe2 from its bulk and bilayer counterparts, which are both indirect gap materials with smaller bandgaps. This sizable direct bandgap in a two-dimensional layered material enables a host of new optical and electronic devices. In this work, a comprehensive analysis of the effect of optical excitation on the transport properties in few-layer WSe2 is studied. Monolayer WSe2 flakes from natural WSe2 crystals were transferred onto Si/SiO2 (270nm) substrates by mechanical exfoliation. The flakes were observed under an optical microscope. A FET based on mechanically exfoliated WSe2 was fabricated using photolithography with Molybdenum as metal contact and Silicon as back gate and the electronic properties were measured in a wide range of temperatures. The mobility of our device was found to be 0.2 cm /V-S at room temperature. The schottky barrier height was found to decrease from 80 meV to 25 meV as the gate voltage increases.

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