Large Difference of Doping Behavior of Tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on Field Effect Transistor with Channel of Atomic Layer MoS2

The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition

Instrumentation et Interdisciplinarité ◽

10.1051/978-2-7598-1206-6-044 ◽

2020 ◽

pp. 351-358

Author(s):

Michael Lee ◽

Abdoullatif Baraket ◽

Nadia Zine ◽

Miguel Zabala ◽

Francesca Campabadal ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Thin Layer ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Electrochemical Characteristics ◽

Ph Sensing ◽

Layer Deposition ◽

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

Organic Electronics ◽

10.1016/j.orgel.2014.10.022 ◽

2014 ◽

Vol 15 (12) ◽

pp. 3780-3786 ◽

Cited By ~ 4

Author(s):

Sangmoo Choi ◽

Canek Fuentes-Hernandez ◽

Minseong Yun ◽

Amir Dindar ◽

Talha M. Khan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Organic Field Effect Transistor ◽

Transistor Circuits ◽

A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs

Materials Science and Engineering B ◽

10.1016/s0921-5107(00)00583-3 ◽

2001 ◽

Vol 84 (3) ◽

pp. 155-158 ◽

Cited By ~ 3

Author(s):

J.C Martı́nez-Orozco ◽

L.M Gaggero-Sager ◽

Stoyan J Vlaev

Keyword(s):

Simple Model ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Differential Capacitance ◽

Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.06.352 ◽

2019 ◽

Vol 804 ◽

pp. 213-219 ◽

Cited By ~ 6

Author(s):

Youngjun Kim ◽

Mincheol Chang ◽

Seongeun Cho ◽

Minkyong Kim ◽

Hyunsik Kim ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Atomic Layer ◽

Effect Transistor ◽

Zno Nanocrystal

Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Cited By ~ 7

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of

Fabrication Characteristics of Al2O3 pH-Ion Sensitive Field Effect Transistor Fabricated Using Atomic Layer Deposition and Sputter

Sensor Letters ◽

10.1166/sl.2011.1407 ◽

2011 ◽

Vol 9 (1) ◽

pp. 3-6 ◽

Cited By ~ 6

Author(s):

Sang-Kwon Lee ◽

Young-Soo Sohn ◽

Sie-Young Choi

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Layer Deposition ◽

Atomic layer epitaxy of planar‐doped structures for nonalloyed contacts and field‐effect transistor

10.1063/1.102593 ◽

1990 ◽

Vol 56 (10) ◽

pp. 964-966 ◽

Cited By ~ 16

Author(s):

M. Hashemi ◽

J. Ramdani ◽

B. T. McDermott ◽

K. Reid ◽

S. M. Bedair

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

10.1063/1.3684803 ◽

2012 ◽

Vol 100 (6) ◽

pp. 062905 ◽

Cited By ~ 25

Author(s):

C. Mahata ◽

S. Mallik ◽

T. Das ◽

C. K. Maiti ◽

G. K. Dalapati ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

10.1063/1.101263 ◽

1989 ◽

Vol 54 (19) ◽

pp. 1869-1871 ◽

Cited By ~ 43

Author(s):

Kiyokazu Nakagawa ◽

Aart A. van Gorkum ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Atomic Layer ◽

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Cited By ~ 250

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽