Radical flux control in reactive ion beam etching (RIBE) by dual exhaust system

2022 ◽  
Vol 571 ◽  
pp. 151311
Author(s):  
Doo San Kim ◽  
Yun Jong Jang ◽  
Ye Eun Kim ◽  
Hong Seong Gil ◽  
Hee Ju Kim ◽  
...  
Keyword(s):  
Ion Beam ◽  
Exhaust System ◽  
Flux Control ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching

Vapor deposition polymerization and reactive ion beam etching of poly(p-xylylene) films for waveguide applications

1999 ◽  
Vol 12 (2-3) ◽  
pp. 229-233 ◽  
Author(s):  
Bernard Ratier ◽  
Yong Seok Jeong ◽  
André Moliton ◽  
Pierre Audebert
Keyword(s):  
Vapor Deposition ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

scholarly journals Traceless mitigation of laser damage precursors on a fused silica surface by combining reactive ion beam etching with dynamic chemical etching

RSC Advances ◽  
2018 ◽  
Vol 8 (57) ◽  
pp. 32417-32422
Author(s):  
Laixi Sun ◽  
Ting Shao ◽  
Jianfeng Xu ◽  
Xiangdong Zhou ◽  
Xin Ye ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Silica Surface ◽  
Ion Beam ◽  
Fused Silica ◽  
Laser Damage ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

RIBE and DCE techniques can be combined to tracelessly mitigate laser damage precursors on a fused silica surface.

Possibility for the form correction of X-ray mirrors by reactive ion-beam etching

2012 ◽  
Vol 6 (3) ◽  
pp. 487-489 ◽  
Author(s):  
A. A. Akhsakhalyan ◽  
A. D. Akhsakhalyan ◽  
Yu. A. Vainer ◽  
D. G. Volgunov ◽  
M. V. Zorina ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

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