The influence of the photovoltaic effect on the surface electric field in GaN

2021 ◽  
pp. 151905
Author(s):  
Ewelina Zdanowicz ◽  
Artur P. Herman ◽  
Robert Kudrawiec
Keyword(s):  
Electric Field ◽  
Photovoltaic Effect ◽  
Surface Electric Field

Photoreflectance Characterization of InGaAs/GaAs Superlattices Grown on [111]-Oriented Substrates

1993 ◽  
Vol 324 ◽  
Author(s):  
R. G. Rodrigues ◽  
K. Yang ◽  
L. J. Schowalter ◽  
J. M. Borrego
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Photovoltaic Effect ◽  
Quantum Structures ◽  
Optical Transitions ◽  
Linear Absorption ◽  
Free Carriers ◽  
Gaas Substrates ◽  
Surface Electric Field

AbstractWe report the results of a photoreflectance (PR) study of InGaAs/GaAs strained-layer quantum wells and superlattices (SLSs) grown by MBE on [111]B GaAs substrates. Under our measurement conditions, the PR spectra display features we can relate to the bandgaps of both materials and to optical transitions in the quantum structures. Using the photovoltaic effect to vary the surface electric field of our i-n+ and p+-i-n+ samples in a strictly contactless manner, we find optical transitions red-shifting with increasing intensity of illumination from a CW HeNe laser in [111]-grown structures, a well known effect which can be attributed to the straingenerated electric field (SGEF) present in these structures. We also find experimental support for the predicted effectiveness of free-carriers in screening the SGEF and thereby originating highly non-linear absorption.

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Lifting of the Spin Degeneracy of Hole Subbands in a Surface Electric Field on Silicon

1984 ◽  
Vol 53 (5) ◽  
pp. 493-496 ◽  
Author(s):  
A. D. Wieck ◽  
E. Batke ◽  
D. Heitmann ◽  
J. P. Kotthaus ◽  
E. Bangert
Keyword(s):  
Electric Field ◽  
Spin Degeneracy ◽  
Surface Electric Field

Characterization of Si wafers by μ-PCD with surface electric field

2000 ◽  
Vol 73 (1-3) ◽  
pp. 230-234 ◽  
Author(s):  
M Ichimura ◽  
M Hirano ◽  
A Tada ◽  
E Arai ◽  
H Takamatsu ◽  
...  
Keyword(s):  
Electric Field ◽  
Surface Electric Field

Effects of surface electric field on SnO 2 room temperature gas sensors fabricated on nanospike substrates

2012 ◽  
Author(s):  
Haizhou Ren ◽  
Pengtao Wang ◽  
Haibin Huo ◽  
Mengyan Shen ◽  
Marina Ruths ◽  
...  
Keyword(s):  
Electric Field ◽  
Gas Sensors ◽  
Room Temperature ◽  
Surface Electric Field
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