Role of the metal supply pathway on silicon patterning by oblique ion beam sputtering

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

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Symmetry of surface nanopatterns induced by ion-beam sputtering: Role of anisotropic surface diffusion

Physical Review B ◽

10.1103/physrevb.93.155424 ◽

2016 ◽

Vol 93 (15) ◽

Cited By ~ 7

Author(s):

Javier Renedo ◽

Rodolfo Cuerno ◽

Mario Castro ◽

Javier Muñoz-García

Keyword(s):

Surface Diffusion ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Anisotropic Surface ◽

Beam Sputtering

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Amorphous or nanocrystalline AlN thin films formed from AlN: H

Journal of Materials Research ◽

10.1557/jmr.1994.1449 ◽

1994 ◽

Vol 9 (6) ◽

pp. 1449-1455 ◽

Cited By ~ 11

Author(s):

Xiao-Dong Wang ◽

K.W. Hipps ◽

J.T. Dickinso ◽

Ursula Mazur

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Atmospheric Gases ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Substrate Heating ◽

Beam Sputtering ◽

Diffraction Peaks ◽

Uv Visible

This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

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Role of Rare Earth Elements and Entropy on the Anatase-To-Rutile Phase Transformation of TiO2 Thin Films Deposited by Ion Beam Sputtering

ACS Omega ◽

10.1021/acsomega.0c03431 ◽

2020 ◽

Vol 5 (43) ◽

pp. 28027-28036

Author(s):

Diego L. S. Scoca ◽

Felipe Cemin ◽

Sara A. Bilmes ◽

Carlos A. Figueroa ◽

Antonio R. Zanatta ◽

...

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Rare Earth ◽

Rare Earth Elements ◽

Ion Beam ◽

Rutile Phase ◽

Ion Beam Sputtering ◽

Tio2 Thin Films ◽

Beam Sputtering

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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TEM Study of Co/Pd and Co/Au Multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151015 ◽

1993 ◽

Vol 51 ◽

pp. 1036-1037

Author(s):

A.E.M. De Veirman ◽

F.J.G. Hakkens ◽

W.M.J. Coene ◽

F.J.A. den Broeder

Keyword(s):

Magnetic Anisotropy ◽

Ion Beam ◽

Perpendicular Magnetic Anisotropy ◽

Optical Recording ◽

Magnetic Multilayer ◽

Ion Beam Sputtering ◽

Cross Sectional ◽

Transmission Electron ◽

Beam Sputtering ◽

Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

MRS Proceedings ◽

10.1557/proc-762-a7.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Z.B. Zhou ◽

G.M. Hadi ◽

R.Q. Cui ◽

Z.M. Ding ◽

G. Li

Keyword(s):

Solar Cell ◽

Ion Beam ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Chamber Pressure ◽

Ion Beam Sputtering ◽

High Hydrogen ◽

Beam Sputtering ◽

Si Films ◽

Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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