CVD diamond growth: Replacing the hot metallic filament with a hot graphite plate

Carbon ◽  
2021 ◽  
Author(s):  
Kee Han Lee ◽  
Won Kyung Seong ◽  
Rodney S. Ruoff
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Graphite Plate ◽  
Metallic Filament

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

scholarly journals Analytical TEM study of CVD diamond growth on TiO2 sol–gel layers

2012 ◽  
Vol 23 ◽  
pp. 93-99 ◽  
Author(s):  
Ying-Gang Lu ◽  
Johan Verbeeck ◽  
Stuart Turner ◽  
An Hardy ◽  
Stoffel D. Janssens ◽  
...  
Keyword(s):  
Sol Gel ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Analytical Tem ◽  
Tio2 Sol

OES study of the plasma during CVD diamond growth using CCl 4 /H 2 /O 2 mixtures

2000 ◽  
Vol 9 (3-6) ◽  
pp. 368-372 ◽  
Author(s):  
N.G. Ferreira ◽  
E.J. Corat ◽  
V.J. Trava-Airoldi ◽  
N.F. Leite
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth

Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces

2000 ◽  
Vol 9 (3-6) ◽  
pp. 246-250 ◽  
Author(s):  
Simon Proffitt ◽  
Christopher H.B. Thompson ◽  
Aurora Gutierrez-Sosa ◽  
Nathan Paris ◽  
Nagindar K. Singh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Diamond Surfaces

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond

2015 ◽  
Vol 1728 ◽  
Author(s):  
Stefano Gay ◽  
Giacomo Reina ◽  
Ilaria Cianchetta ◽  
Emanuela Tamburri ◽  
Mariglen Angjellari ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Structural Features ◽  
Diamond Growth ◽  
Color Centers ◽  
Diamond Synthesis ◽  
Substrate Preparation ◽  
Photoluminescence Emission ◽  
Diamond Phase ◽  
Growth Methods

ABSTRACTWe report here on the chemical methodologies that are being settled in our labs for the insertion in diamond of foreign atoms and consequent creation of fluorescent defects. The inclusion of Si, Cr, Ge, able to produce color centers, is directly obtained during the process of diamond synthesis by means of a CVD technique. The deposition of the diamond films takes place on substrates of different nature, treated following procedures specifically settled to control the insertion of the different species. The photoluminescence emission from a series of diamond samples grown on different substrates (Si, Ge and Ti) has been investigated and is discussed with reference to the morphological/structural features of the diamond phase and to the experimental procedures adopted for substrate preparation.

Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth

1997 ◽  
Vol 6 (2-4) ◽  
pp. 430-434 ◽  
Author(s):  
A.P. Malshe ◽  
R.A. Beera ◽  
A.A. Khanolkar ◽  
W.D. Brown ◽  
H.A. Naseem
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Nucleation Density ◽  
Initial Results

CVD Diamond Growth

2003 ◽  
pp. 93-141 ◽  
Author(s):  
C. Chang ◽  
Y. Liao ◽  
G.Z. Wang ◽  
Y.R. Ma ◽  
R.C. Fang
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth
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