Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond

2015 ◽  
Vol 1728 ◽  
Author(s):  
Stefano Gay ◽  
Giacomo Reina ◽  
Ilaria Cianchetta ◽  
Emanuela Tamburri ◽  
Mariglen Angjellari ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Structural Features ◽  
Diamond Growth ◽  
Color Centers ◽  
Diamond Synthesis ◽  
Substrate Preparation ◽  
Photoluminescence Emission ◽  
Diamond Phase ◽  
Growth Methods

ABSTRACTWe report here on the chemical methodologies that are being settled in our labs for the insertion in diamond of foreign atoms and consequent creation of fluorescent defects. The inclusion of Si, Cr, Ge, able to produce color centers, is directly obtained during the process of diamond synthesis by means of a CVD technique. The deposition of the diamond films takes place on substrates of different nature, treated following procedures specifically settled to control the insertion of the different species. The photoluminescence emission from a series of diamond samples grown on different substrates (Si, Ge and Ti) has been investigated and is discussed with reference to the morphological/structural features of the diamond phase and to the experimental procedures adopted for substrate preparation.

scholarly journals The Transformation from (111) to (100): A Routine to Large-Scale Epitaxial Diamond

2020 ◽  
Author(s):  
Yang Wang ◽  
Weihua Wang ◽  
Shilin Yang ◽  
Jiaqi Zhu
Keyword(s):  
Large Scale ◽  
Diamond Films ◽  
Diamond Growth ◽  
Nucleation Density ◽  
Diamond Synthesis ◽  
First Principle ◽  
High Quality ◽  
First Principle Calculations ◽  
Large Size ◽  
Experimental Researches

Diamond is a material with excellent performances which attracts the attention from researchers for decades. Pt (111), owing to its catalytic activity on diamond synthesis, is regarded to be a candidate for diamond hetero-epitaxity, which can enhance nucleation density. Molten surface at diamond growth temperature can also improve mobility and aggregation capability of primitive nuclei. Generally, (100)-oriented is welcomed for the achivement of high quality and large size diamond, since the formation of defects and twins are prevented. First-principle calculations and experimental researches were carried out for the study of transformation of orientation. The transformation from {111} to {100}-oriented diamond has been observed on Pt (111) substrate, which can be promoted by the increase of carbon source concentration and substrate temperature. The process is energetic favorable, which may provides a way towards large-scale (100) diamond films.

On the reduction of the non-diamond phase in nanocrystalline CVD diamond films

2009 ◽  
Vol 18 (5-8) ◽  
pp. 726-729 ◽  
Author(s):  
Z. Remes ◽  
A. Kromka ◽  
M. Vanecek ◽  
S. Ghodbane ◽  
D. Steinmüller-Nethl
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Diamond Phase

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

Fracture of Thin Synthetic Diamond Films

1996 ◽  
Vol 436 ◽  
Author(s):  
M. D. Drory
Keyword(s):  
Synthetic Diamond ◽  
Steel Substrate ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Steel Alloy ◽  
Diamond Coating ◽  
Diamond Coatings ◽  
Growth Environment ◽  
Substrate Hardness

AbstractLarge residual stresses in diamond coatings may result in film failure through splitting, delamination and substrate failure. In addition, the CVD diamond growth environment may degrade the substrate mechanical properties. These issues are examined for diamond-coating of a tool steel alloy. Diamond growth was achieved on the steel substrate with the use of a titanium interlayer. Embrittlement of the Ti interlayer was not evident, however the substrate hardness was severely degraded.

scholarly journals SUPPRESSION OF CVD DIAMOND GROWTH ON SIDE FACE OF SUBSTRATE IN PROCESS OF GAS-PHASE PRECIPITATION

2018 ◽  
Vol 59 (8) ◽  
pp. 64
Author(s):  
Dmitry V. Teteruk ◽  
Vitaly S. Bormashov ◽  
Sergey A. Tarelkin ◽  
Nikolay V. Kornilov ◽  
Nikolay V. Luparev ◽  
...  
Keyword(s):  
Gas Phase ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Structural Quality ◽  
Phase Precipitation ◽  
Diamond Layer ◽  
Side Face

CVD diamond grows on the all surfaces of the substrate, including the side faces. However, the diamond layer on side faces may be undesirable. We proposed and developed the method to suppress the CVD diamond growth on the side faces using silicon wells. The optimal geometric dimensions of the wells were determined. The studies of the structural quality of the CVD diamond films were carried out.

Adhesion Evaluation of CVD Diamond Films and Metal Reinforced Composite Diamond Films

1995 ◽  
Vol 383 ◽  
Author(s):  
D. F. Bahr ◽  
J..C. Nelson ◽  
D. Zhuang ◽  
E. Pfender ◽  
J. Heberlein ◽  
...  
Keyword(s):  
Composite Films ◽  
Cutting Tools ◽  
Diamond Films ◽  
Composite Layer ◽  
Cvd Diamond ◽  
Single Step ◽  
Diamond Growth ◽  
Metal Binder ◽  
Tension And Compression ◽  
Bend Tests

ABSTRACTPoor adhesion of diamond films limits the use of CVD diamond films as coatings for cutting tools. The adhesion of these films is limited by stresses in the film caused by thermal expansion mismatch between the substrate and the film and by voids present at the interface due to the morphology of the crystal growth. A three step process of making diamond composite films has been developed, involving nucleation of individual diamonds on the substrate, electroplating a metal binder in the voids between the crystals, and lastly growing a complete film over the composite layer. The metal binder acts both to fill the voids at the interface and to absorb energy during fracture processes at the interface. Diamond growth was performed in a DC Triple Torch reactor using a mixture of methane and hydrogen with a molybdenum substrate. Measurements to determine the amount of improvement of the film adhesion have been performed. These tests include indentations using conventional hardness testing equipment and four point bend tests with the film in tension and compression. A correlation is shown between the plastic zone of the substrate and the area of the film which delaminated during indentation. Bend tests with the film in tension did not delaminate the film, instead the film underwent intergranular fracture. Bend tests in compression act similarly to pile up around an indentation, and cause film delamination. Residual stress measurements in the single step film show a compressive stress of 650 MPa.

DIAMOND DEPOSITION ON WC/Co ALLOY WITH A MOLYBDENUM INTERMEDIATE LAYER

2005 ◽  
Vol 12 (04) ◽  
pp. 499-504
Author(s):  
SHA LIU ◽  
ZHI-MING YU ◽  
DAN-QING YI
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Diamond Coatings ◽  
Sputter Deposited ◽  
Diamond Grain

It is known that in the condition of chemical vapor deposition (CVD) diamond process, molybdenum is capable of forming carbide known as the "glue" which promotes growth of the CVD diamond, and aids its adhesion by (partial) relief of stresses at the interface. Furthermore, the WC grains are reaction bonded to the Mo 2 C phase. Therefore, molybdenum is a good candidate material for the intermediate layer between WC–Co substrates and diamond coatings. A molybdenum intermediate layer of 1–3 μm thickness was magnetron sputter-deposited on WC/Co alloy prior to the deposition of diamond coatings. Diamond films were deposited by hot filament chemical vapor deposition (HFCVD). The chemical quality, morphology, and crystal structure of the molybdenum intermediate layer and the diamond coatings were characterized by means of SEM, EDX, XRD and Raman spectroscopy. It was found that the continuous Mo intermediate layer emerged in spherical shapes and had grain sizes of 0.5–1.5 μm after 30 min sputter deposition. The diamond grain growth rate was slightly slower as compared with that of uncoated Mo layer on the WC–Co substrate. The morphologies of the diamond films on the WC–Co substrate varied with the amount of Mo and Co on the substrate. The Mo intermediate layer was effective to act as a buffer layer for both Co diffusion and diamond growth.

Geometric Model of CVD Mono-Crystalline Diamond Growth

2015 ◽  
Vol 730 ◽  
pp. 160-163
Author(s):  
Li Zhu Zhang ◽  
Fu Zhong Wang ◽  
Guang Tian
Keyword(s):  
Surface Area ◽  
Growth Model ◽  
Geometric Model ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Growth Strategy ◽  
Diamond Growth ◽  
Film Characteristics

In order to describe the morphology of diamond films, we have developed a geometrical growth model which takes into account the displacement of the observed faces [1].We will see how to establish the topologies that are potentially accessible to CVD diamond growth.Lastly, we will present results showing the influence of the occurrence of certain crystalline faces on the film characteristics. From these results, we will show how the growth model and to establish a growth strategy aimed at obtaining large usable surface area crystals.

Study of color centers in hot-filament CVD diamond films by cathodoluminescence and photoluminescence and their correlations with film quality

1996 ◽  
Vol 5 (11) ◽  
pp. 1236-1245 ◽  
Author(s):  
L.-T.S. Lin ◽  
Galina Popovici ◽  
Y. Mori ◽  
A. Hiraki ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Color Centers ◽  
Hot Filament Cvd ◽  
Hot Filament

Combustion Flowfield Prediction for CVD Diamond Synthesis

1992 ◽  
Author(s):  
Mingchun Dong ◽  
David G. Lilley
Keyword(s):  
Computer Code ◽  
Cvd Diamond ◽  
Separation Distance ◽  
Diamond Growth ◽  
Diamond Synthesis ◽  
Jet Flame ◽  
Axisymmetric Jet ◽  
Jet Nozzle ◽  
Combustion Flow ◽  
Oxygen Ratio

Abstract A computer code has been developed to simulate the combustion flowfield of an axisymmetric jet flame impinging normally on to a flat plate. Premixed oxygen and acetylene emerges from the jet nozzle, and complexities include turbulence and high temperature chemical kinetics. In CVD diamond synthesis, parameters of interest include the fuel-oxygen ratio and the distance from the heat nozzle to the surface. Combustion flow field predictions are given for acetylene and oxygen flames (all fuel rich), axisymmetric-vertical impingement on an adiabatic surface to show the effects of varying the nozzle-substrate separation distance, nozzle size, overall equivalence ratio and flow rate on the flowfield and substrate temperature. These have been shown to have dramatic effects on the rate of diamond growth on the surface.

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