Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth

1997 ◽  
Vol 6 (2-4) ◽  
pp. 430-434 ◽  
Author(s):  
A.P. Malshe ◽  
R.A. Beera ◽  
A.A. Khanolkar ◽  
W.D. Brown ◽  
H.A. Naseem
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Nucleation Density ◽  
Initial Results

scholarly journals The Transformation from (111) to (100): A Routine to Large-Scale Epitaxial Diamond

2020 ◽  
Author(s):  
Yang Wang ◽  
Weihua Wang ◽  
Shilin Yang ◽  
Jiaqi Zhu
Keyword(s):  
Large Scale ◽  
Diamond Films ◽  
Diamond Growth ◽  
Nucleation Density ◽  
Diamond Synthesis ◽  
First Principle ◽  
High Quality ◽  
First Principle Calculations ◽  
Large Size ◽  
Experimental Researches

Diamond is a material with excellent performances which attracts the attention from researchers for decades. Pt (111), owing to its catalytic activity on diamond synthesis, is regarded to be a candidate for diamond hetero-epitaxity, which can enhance nucleation density. Molten surface at diamond growth temperature can also improve mobility and aggregation capability of primitive nuclei. Generally, (100)-oriented is welcomed for the achivement of high quality and large size diamond, since the formation of defects and twins are prevented. First-principle calculations and experimental researches were carried out for the study of transformation of orientation. The transformation from {111} to {100}-oriented diamond has been observed on Pt (111) substrate, which can be promoted by the increase of carbon source concentration and substrate temperature. The process is energetic favorable, which may provides a way towards large-scale (100) diamond films.

Investigation of silicon-vacancy centers formation during the CVD diamond growth of thin and delta doped layers

2021 ◽  
Author(s):  
Mikhail Lobaev ◽  
Alexey Gorbachev ◽  
Dmitry Radishev ◽  
Anatoly Vikharev ◽  
Sergey Bogdanov ◽  
...  
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Silicon Doped ◽  
The Relationship

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

scholarly journals Analytical TEM study of CVD diamond growth on TiO2 sol–gel layers

2012 ◽  
Vol 23 ◽  
pp. 93-99 ◽  
Author(s):  
Ying-Gang Lu ◽  
Johan Verbeeck ◽  
Stuart Turner ◽  
An Hardy ◽  
Stoffel D. Janssens ◽  
...  
Keyword(s):  
Sol Gel ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Analytical Tem ◽  
Tio2 Sol

OES study of the plasma during CVD diamond growth using CCl 4 /H 2 /O 2 mixtures

2000 ◽  
Vol 9 (3-6) ◽  
pp. 368-372 ◽  
Author(s):  
N.G. Ferreira ◽  
E.J. Corat ◽  
V.J. Trava-Airoldi ◽  
N.F. Leite
Keyword(s):  
Cvd Diamond ◽  
Diamond Growth

A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

1997 ◽  
Vol 12 (10) ◽  
pp. 2686-2698 ◽  
Author(s):  
L. Fayette ◽  
B. Marcus ◽  
M. Mermoux ◽  
N. Rosman ◽  
L. Abello ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sequential Analysis ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Internal Stresses ◽  
Nucleation Density ◽  
Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

Understanding the chemistry of low temperature diamond growth: an investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces

2000 ◽  
Vol 9 (3-6) ◽  
pp. 246-250 ◽  
Author(s):  
Simon Proffitt ◽  
Christopher H.B. Thompson ◽  
Aurora Gutierrez-Sosa ◽  
Nathan Paris ◽  
Nagindar K. Singh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Diamond Surfaces

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond

2015 ◽  
Vol 1728 ◽  
Author(s):  
Stefano Gay ◽  
Giacomo Reina ◽  
Ilaria Cianchetta ◽  
Emanuela Tamburri ◽  
Mariglen Angjellari ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Structural Features ◽  
Diamond Growth ◽  
Color Centers ◽  
Diamond Synthesis ◽  
Substrate Preparation ◽  
Photoluminescence Emission ◽  
Diamond Phase ◽  
Growth Methods

ABSTRACTWe report here on the chemical methodologies that are being settled in our labs for the insertion in diamond of foreign atoms and consequent creation of fluorescent defects. The inclusion of Si, Cr, Ge, able to produce color centers, is directly obtained during the process of diamond synthesis by means of a CVD technique. The deposition of the diamond films takes place on substrates of different nature, treated following procedures specifically settled to control the insertion of the different species. The photoluminescence emission from a series of diamond samples grown on different substrates (Si, Ge and Ti) has been investigated and is discussed with reference to the morphological/structural features of the diamond phase and to the experimental procedures adopted for substrate preparation.

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