Poly(vinylidene fluoride) membrane based thin film microextraction for enrichment of benzoylurea insecticides from water samples followed by their determination with HPLC

AbstractA pyroelectric infrared sensor using a poly(vinylidene fluoride) (PVDF) thin film has been integrated with a read-out circuit on a silicon substrate. The PVDF thin film with a thickness of 1-2 µm was deposited on the sensing area by an electro-spray (ESP) method. A form I crystal and a large pyroelectric coefficient of 4 nCcm−2K−1 were observed just after the deposition without any poling treatments. The fabrication process of the sensor was based on a standard MOS LSI process and a polysilicon sacrificial layer etching technique. In order to reduce the heat capacitance and the thermal conduction, the PVDF thin film was supported on a thin Si3N4 membrane structure formed by etching a part of the silicon substrate under the sensing area. The sensor with a sensing area of 400x400 µm2 had a responsivity of 98 V/W, a detectivity of l.4× 107 cmHz1/2W−1, an NEP of 2.9× 10−99 Hz1/2W at a frequency of 100 Hz and a time constant of 1.3 msec.

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Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dj06 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DJ06 ◽

Cited By ~ 10

Author(s):

Sung-Min Yoon ◽

Shin-Hyuk Yang ◽

Chun-Won Byun ◽

Sang-Hee Ko Park ◽

Soon-Won Jung ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Nonvolatile Memory ◽

Vinylidene Fluoride ◽

Zno Thin Film ◽

Poly Vinylidene Fluoride

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Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.11151 ◽

2015 ◽

Vol 15 (10) ◽

pp. 7526-7530 ◽

Cited By ~ 4

Author(s):

Soon-Won Jung ◽

Jae Bon Koo ◽

Chan Woo Park ◽

Bock Soon Na ◽

Ji-Young Oh ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Vinylidene Fluoride ◽

Channel Structure ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Hybrid Thin Film ◽

Inorganic Hybrid ◽

Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

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