Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ06 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
Soon-Won Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Vinylidene Fluoride ◽  
Zno Thin Film ◽  
Poly Vinylidene Fluoride

SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

2011 ◽  
Vol 99 (11) ◽  
pp. 112115 ◽  
Author(s):  
Eunkyeom Kim ◽  
Youngill Kim ◽  
Do Han Kim ◽  
Kyoungmi Lee ◽  
Gregory N. Parsons ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Zno Thin Film ◽  
Charge Trap

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures

2015 ◽  
Vol 15 (10) ◽  
pp. 7526-7530 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Channel Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Poly Vinylidene Fluoride

In this study, stretchable organic–inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioff ratio, and subthreshold swing (SS) values of 6.1 cm2 V−1 s−1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.

Characterization of magnesium oxide gate insulators grown using RF sputtering for ZnO thin-film transistors

2014 ◽  
Vol 14 (5) ◽  
pp. 794-797 ◽  
Author(s):  
Jong Hoon Lee ◽  
Hong Seung Kim ◽  
Sang Hyun Kim ◽  
Nak Won Jang ◽  
Young Yun
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Thin Film Transistors ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Gate Insulators

scholarly journals ARATION AND CHARACTERIZATION POLY (VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) COPOLYMER THIN FILMS FOR ORGANIC FERROELECTRIC FIELD EFFECT THIN FILM TRANSISTORS.

2015 ◽  
Vol 2 (1) ◽  
pp. 7-10
Author(s):  
Chandar Shekar B ◽  
Sulana Sundari ◽  
Sunnitha S ◽  
Sharmila C
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Polyvinylidene Fluoride ◽  
Vinylidene Fluoride ◽  
Piezoelectric Response ◽  
Amorphous Nature ◽  
Poly Vinylidene Fluoride

Polyvinylidene fluoride (PVDF) and Trifluoroethylene ((TrFE) are potential polymers which are used in acoustic transducers and electromechanical actuators because of their inherent piezoelectric response, as heat sensors because of their inherent pyroelectric response and as dielectric layer in organic thin filmtransistors. In the present study thin films of copolymer Poly(vinylidene fluoride-trifluoroethylene) were prepared by spin coating method for two different concentrations 2% to 8% and for various spin speeds from 2000 RPM to 5000 RPM. A P-type Si wafer was used as a substrate to deposit P(VDF-TrFE) thin films. 2-butanone was used as a solvent to prepare P(VDF-TrFE) solution. To study the annealing effect, the films were annealed for three different temperatures 50°C, 100° C and 175° C. Ellipsometry was used to measure the thickness of the films. The identification of the films prepared was done by using FTIR spectrophotometer. The structure of the films was studied by using small angle XRD. The morphology of the coated surface was investigated using SEM. It is observed that the thickness of the film coated depends on concentration, spin speed and annealing temperature. The XRD spectrum indicated the amorphous nature with crystallites of very low dimension. SEM micrographs also conforms the predominantly amorphous nature of the film surface. The observed smooth surface with amorphous structure indicated that these films could be used as dielectric layer in organic ferroelectric field effect thin film transistors.

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