An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine

2021 ◽  
pp. 133350
Author(s):  
Konstantina Christina Topka ◽  
Hugues Vergnes ◽  
Tryfon Tsiros ◽  
Paris Papavasileiou ◽  
Laura Decosterd ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Moderate Temperature

scholarly journals Development of a kinetic model for the moderate temperature chemical vapor deposition of SiO2 films from tetraethyl orthosilicate and oxygen

AIChE Journal ◽  
2018 ◽  
Vol 64 (11) ◽  
pp. 3958-3966 ◽  
Author(s):  
Simon Ponton ◽  
Hugues Vergnes ◽  
Diane Samelor ◽  
Daniel Sadowski ◽  
Constantin Vahlas ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tetraethyl Orthosilicate ◽  
Moderate Temperature ◽  
Sio2 Films

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

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