Effects of various substrate materials on microstructural and optical properties of amorphous silicon oxynitride thin films deposited by plasma-enhanced chemical vapor deposition

2020 ◽  
Vol 709 ◽  
pp. 138186
Author(s):  
Liangyi Hang ◽  
Weiguo Liu ◽  
Junqi Xu ◽  
Chen Yang ◽  
Shun Zhou
2003 ◽  
Vol 23 (6-8) ◽  
pp. 1013-1016 ◽  
Author(s):  
D. Barreca ◽  
G. Bruno ◽  
A. Gasparotto ◽  
M. Losurdo ◽  
E. Tondello

1994 ◽  
Vol 336 ◽  
Author(s):  
K. Gaughan ◽  
J.M. Viner ◽  
P.C. Taylor

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.


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