On the form of high-frequency voltage-capacitance characteristics of metal-insulator-semiconductor structures with a ferroelectric insulating layer BaxSr1-хTiO3

2021 ◽  
Author(s):  
Evgeny I. Goldman ◽  
Galina V. Chucheva ◽  
Dmitry A. Belorusov
Keyword(s):  
High Frequency ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Characteristics

Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

2011 ◽  
Vol 53 (9) ◽  
pp. 1921-1926 ◽  
Author(s):  
G. L. Klimchitskaya ◽  
A. B. Fedortsov ◽  
Yu. V. Churkin ◽  
V. A. Yurova
Keyword(s):  
Casimir Force ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Force Pressure

Influence of ultrashort pulses of electromagnetic radiation on parameters of metal-insulator-semiconductor structures

2004 ◽  
Vol 38 (12) ◽  
pp. 1390-1393
Author(s):  
V. A. Terekhov ◽  
A. N. Man’ko ◽  
E. N. Bormontov ◽  
V. N. Levchenko ◽  
S. Yu. Trebunskikh ◽  
...  
Keyword(s):  
Electromagnetic Radiation ◽  
Ultrashort Pulses ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures
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