Influence of Li Doping on the Morphological Evolution and Optical & Electrical Properties of SnO2 Nanomaterials and SnO2/Li2SnO3 Composite Nanomaterials

2021 ◽  
Author(s):  
Zhichao Song ◽  
Jun Zhang ◽  
Yan Wang ◽  
Jianping Li
Keyword(s):  
Electrical Properties ◽  
Morphological Evolution ◽  
Composite Nanomaterials ◽  
Li Doping

Effect of Li doping on the structural, optical and electrical properties of spray deposited SnO2 thin films

2009 ◽  
Vol 517 (21) ◽  
pp. 6129-6136 ◽  
Author(s):  
D. Paul Joseph ◽  
P. Renugambal ◽  
M. Saravanan ◽  
S. Philip Raja ◽  
C. Venkateswaran
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Li Doping ◽  
Sno2 Thin Films

The Lithium Doping Effect on (Na0.5K0.5)NbO3 Lead-Free Piezo-Ceramics Structure Stability and Ferroelectric Characteristics

2012 ◽  
Vol 217-219 ◽  
pp. 682-685
Author(s):  
Chuan Chou Hwang ◽  
Chen Chia Chou ◽  
Jyh Liang Wang ◽  
Tsang Yen Hsieh ◽  
Jui Te Tseng
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Lithium Oxide ◽  
Structure Stability ◽  
Potassium Sodium Niobate ◽  
Li Doping ◽  
Lithium Doping ◽  
Mixing Method

The structure stability、micro-structure and electrical properties of lithium doping on potassium sodium niobate ceramics (Na0.5K0.5)NbO3 (NKN) were investigated in this study. Solid oxide mixing method with post calcination and sintering was employed to fabricate(Na0.5K0.5)(1-x) LixNbO3 ceramic. Lithium oxide was adopted as the sintering aids. For Li doping x=6 mol% in (Na0.5K0.5)(1-x) LixNbO3 ceramic a optimal crystallization and electrical properties could be achieved after 650°C calcination and 1060°C sintering. Ferroelectric properties of the lead-free ceramic behaved a coercive field of 12.5kV/cm and remanent polarization as high as 30uC/cm2.

Silicon nano-asperities: Morphological evolution and electrical properties of double-polysilicon interlayers

2004 ◽  
Vol 33 (7) ◽  
pp. 819-825 ◽  
Author(s):  
R. Edrei ◽  
E. N. Shauly ◽  
Y. Roizin ◽  
V. V. Gridin ◽  
R. Akhvlediani ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Morphological Evolution

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

A quantitative image analysis method for the determination of cocontinuity in polymer blends

1993 ◽  
Vol 51 ◽  
pp. 894-895
Author(s):  
William A. Heeschen
Keyword(s):  
Image Analysis ◽  
Polymer Blends ◽  
Quantitative Measurement ◽  
Morphological Evolution ◽  
Phase Ratio ◽  
Irregular Shapes ◽  
Quantitative Image ◽  
Discrete Domains ◽  
A Domains

Two new morphological measurements based on digital image analysis, CoContinuity and CoContinuity Balance, have been developed and implemented for quantitative measurement of morphology in polymer blends. The morphology of polymer blends varies with phase ratio, composition and processing. A typical morphological evolution for increasing phase ratio of polymer A to polymer B starts with discrete domains of A in a matrix of B (A/B < 1), moves through a cocontinuous distribution of A and B (A/B ≈ 1) and finishes with discrete domains of B in a matrix of A (A/B > 1). For low phase ratios, A is often seen as solid convex particles embedded in the continuous B phase. As the ratio increases, A domains begin to evolve into irregular shapes, though still recognizable as separate domains. Further increase in the phase ratio leads to A domains which extend into and surround the B phase while the B phase simultaneously extends into and surrounds the A phase.

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