Effects of deposition temperature on structure, residual stress and corrosion behavior of Cr/TiN/Ti/TiN films

Author(s):  
Haitao Li ◽  
Pengfei Sun ◽  
Donghai Cheng ◽  
Zemin Liu
1992 ◽  
Vol 276 ◽  
Author(s):  
D-G. Oei ◽  
S. L. McCarthy

ABSTRACTMeasurements of the residual stress in polysilicon films made by Low Pressure Chemical Vapor Deposition (LPCVD) at different deposition pressures and temperatures are reported. The stress behavior of phosphorus (P)-ion implanted/annealed polysilicon films is also reported. Within the temperature range of deposition, 580 °C to 650 °C, the stress vs deposition temperature plot exhibits a transition region in which the stress of the film changes from highly compressive to highly tensile and back to highly compressive as the deposition temperature increases. This behavior was observed in films that were made by the LPCVD process at reduced pressures of 210 and 320 mTORR. At deposition temperatures below 590 °C the deposit is predominantly amorphous, and the film is highly compressive; at temperatures above 610 °C (110) oriented polycrystalline silicon is formed exhibiting high compressive residual stress.


2012 ◽  
Vol 586 ◽  
pp. 247-253
Author(s):  
Tsuyoshi Takahashi ◽  
Yoshitaka Iwabuchi ◽  
Kazunori Ishitsuka

The influence of residual stress and sensitizing on the electrochemical and corrosion behavior of type SUS304 stainless steels weldment has been studied in the Freeze-Thaw condition. After immersion test at Freeze-Thaw cyclic condition the severe corrosion damage was detected in the vicinity of weld boundary more than isothermal condition. The corrosion damaged zone corresponds to the location in which there are high residual stress and sensitization. The influence of residual stress and sensitization was distinguished and its magnitude was evaluated by voltammetry method.


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