Quantum dot thin film imaging enables in situ, benchtop analysis of ligand exchange at the solution-film interface

2021 ◽  
Vol 629 ◽  
pp. 127457
Author(s):  
Adam Milam ◽  
Perry T. Wasdin ◽  
Haley Turner ◽  
Mary E. Salyards ◽  
Amanda Clay ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Ligand Exchange ◽  
Film Interface

scholarly journals Optical Patterning: Direct Optical Patterning of Quantum Dot Light‐Emitting Diodes via In Situ Ligand Exchange (Adv. Mater. 46/2020)

2020 ◽  
Vol 32 (46) ◽  
pp. 2070346
Author(s):  
Himchan Cho ◽  
Jia‐Ahn Pan ◽  
Haoqi Wu ◽  
Xinzheng Lan ◽  
Igor Coropceanu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Optical Patterning

Raman Spectroscopy for Semiconductor Thin Film Analysis

1986 ◽  
Vol 69 ◽  
Author(s):  
R. J. Nemanich
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Amorphous Structure ◽  
Film Analysis ◽  
Thin Film Analysis ◽  
Vibrational Excitations ◽  
Semiconductor Thin Film ◽  
Si Films ◽  
Film Interface

AbstractThe application of Raman spectroscopy to various semiconductor thin film, interface and surface problems will be presented. Specific focus will be on the vibrational excitations of the materials systems which are probed by the Raman measurements. Experimental configurations are described which are optimized for general thin film analysis, microprobe analysis, and in situ UHV surface/interface analysis. The vibrational properties can be used for phase and composition identification, crystal/amorphous structure, strain, impurity configurations, and superlattice properties. Specific examples will include thermal processing of CVD Si films, microprobe of laser annealed films, MOCVD AlxGa1−xAs films, silicide formation and identification, amorphous superlattices, and hydrogen impurities in crystalline Si.

Direct Optical Patterning of Quantum Dot Light‐Emitting Diodes via In Situ Ligand Exchange

2020 ◽  
Vol 32 (46) ◽  
pp. 2003805
Author(s):  
Himchan Cho ◽  
Jia‐Ahn Pan ◽  
Haoqi Wu ◽  
Xinzheng Lan ◽  
Igor Coropceanu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Optical Patterning

Single-step in-situ preparation of thin film electrolyte for quasi-solid state quantum dot-sensitized solar cells

2013 ◽  
Vol 224 ◽  
pp. 152-157 ◽  
Author(s):  
Shen Wang ◽  
Quan-Xin Zhang ◽  
Yu-Zhuan Xu ◽  
Dong-Mei Li ◽  
Yan-Hong Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solid State ◽  
Quantum Dot ◽  
Single Step ◽  
In Situ Preparation ◽  
Thin Film Electrolyte ◽  
Film Electrolyte ◽  
Sensitized Solar Cells

scholarly journals In situ spectroscopic characterization of a solution-phase X-type ligand exchange at colloidal lead sulphide quantum dot surfaces

2016 ◽  
Vol 52 (96) ◽  
pp. 13893-13896 ◽  
Author(s):  
D. M. Kroupa ◽  
N. C. Anderson ◽  
C. V. Castaneda ◽  
A. J. Nozik ◽  
M. C. Beard
Keyword(s):  
Nmr Spectroscopy ◽  
Quantum Dot ◽  
Exchange Reaction ◽  
Ligand Exchange ◽  
Spectroscopic Characterization ◽  
Solution Phase ◽  
Lead Sulphide ◽  
Ligand Exchange Reaction

We employed quantitative NMR spectroscopy and spectrophotometric absorbance titration to study a quantum dot X-type ligand exchange reaction.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

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