Interatomic potential for atomistic simulation of self-catalyzed GaAs nanowires growth

2020 ◽  
Vol 183 ◽  
pp. 109805
Author(s):  
Douglas Soares Oliveira ◽  
Mônica Alonso Cotta ◽  
José Eduardo Padilha
2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Dan Huang ◽  
Mengwei Wang ◽  
Guangda Lu

Crack initiation and propagation in a nanostructured nickel film were studied by molecular dynamic simulation as well as an interatomic-potential-based continuum approach. In the molecular dynamic simulation, the interatomic potential was described by using Embedded Atom Method (EAM), and a reduced 2D plane model was employed to simulate the mechanical behavior of nanofilms. Atomistic simulation shows that the reduced plane model in this paper can not only reveal the physical nature of crack initiation clearly but also give the critical time of crack initiation accurately as the continuum fracture analysis does. The normal stress and average atom energy at the crack tip which resulted from atomistic simulation at the time of crack initiation agree well with the analytical results. On the other hand, the crack propagation in nanofilms was studied by interatomic-potential-based continuum fracture mechanics analysis based on Griffith criterion. The coupled continuum-atomic analysis can predict the crack initiation and atomic stress accurately. Continuum analysis with material property parameters determined by interatomic potential is proved to be another promising way of solving failure problem on nanoscale.


MRS Bulletin ◽  
1996 ◽  
Vol 21 (2) ◽  
pp. 17-19 ◽  
Author(s):  
Arthur F. Voter

Atomistic simulations are playing an increasingly prominent role in materials science. From relatively conventional studies of point and planar defects to large-scale simulations of fracture and machining, atomistic simulations offer a microscopic view of the physics that cannot be obtained from experiment. Predictions resulting from this atomic-level understanding are proving increasingly accurate and useful. Consequently, the field of atomistic simulation is gaining ground as an indispensable partner in materials research, a trend that can only continue. Each year, computers gain roughly a factor of two in speed. With the same effort one can then simulate a system with twice as many atoms or integrate a molecular-dynamics trajectory for twice as long. Perhaps even more important, however, are the theoretical advances occurring in the description of the atomic interactions, the so-called “interatomic potential” function.The interatomic potential underpins any atomistic simulation. The accuracy of the potential dictates the quality of the simulation results, and its functional complexity determines the amount of computer time required. Recent developments that fit more physics into a compact potential form are increasing the accuracy available per simulation dollar.This issue of MRS Bulletin offers an introductory survey of interatomic potentials in use today, as well as the types of problems to which they can be applied. This is by no means a comprehensive review. It would be impractical here to attempt to present all the potentials that have been developed in recent years. Rather, this collection of articles focuses on a few important forms of potential spanning the major classes of materials bonding: covalent, metallic, and ionic.


2018 ◽  
Vol 142 ◽  
pp. 303-311 ◽  
Author(s):  
S.V. Starikov ◽  
N.Yu. Lopanitsyna ◽  
D.E. Smirnova ◽  
S.V. Makarov

1997 ◽  
Vol 3 (4) ◽  
pp. 333-338 ◽  
Author(s):  
R. Benedek ◽  
D.N. Seidman ◽  
L.H. Yang

Abstract: Atomistic simulations were performed for the {222}MgO/Cu interface by local density functional theory (LDFT) methods, within the plane-wave-pseudopotential representation, and by (classical) molecular dynamics and statics. The electronic spectra obtained with LDFT calculations showed a localized interface state within the bulk MgO gap, approximately 1 eV above the MgO valence band edge. LDFT adhesive energy calculations, as a function of interface spacing and translations parallel to the interface, were employed to devise an interatomic potential suitable for large-scale atomistic simulation. The interface structure, which was obtained with molecular dynamics (and statics) calculations based on the resultant potential, exhibited a misfit dislocation network with trigonal symmetry, and no standoff dislocations.


2012 ◽  
Vol 706-709 ◽  
pp. 1545-1549 ◽  
Author(s):  
Yoshitaka Umeno ◽  
Jun Negami

The problem of whisker formation in tin (Sn) wiring in small electronic devices has become an important issue with the requirement of lead-free wiring, because doping of Pb to reduce whisker formation cannot be applied. It is therefore urged to better understand stress migration in tin, which is suspected to play a key role in whisker growth. We aim to study grain boundary diffusion in tin by atomistic simulation. After constructing an efficient interatomic potential suitable for diffusion of atoms using the genetic algorithm (GA), we perform molecular dynamics (MD) simulation of grain boundary diffusion in Sn under stress. We find that the magnitude of stress effect on diffusion depends on the boundary structure. Moreover, we examine the effect of impurities on vacancy migration by ab initio calculation to find atom doping that has potential to suppress diffusion.


2021 ◽  
Vol 2 (3) ◽  
pp. 62-73
Author(s):  
Asmaa Albaitai ◽  
Saifaldeen M. Abdalhadi

Computational chemistry is another branch of chemistry that can be used to model the material which is based on the mathematical methods and combined that with the theories of the quantum mechanics. However, in this filed there are two different techniques or categories, classical interatomic potential and the electronic structure methodology. The aim of this paper is to describe how can modelling the structures and energetics of surface and interface processes of minerals surface, using the classical atomistic simulation methods. We will illustrate the types of potentials and some of Codes (Gulp and METADISE) which is needed to do these calculations to elucidate the structures and stabilities as well.


Carbon ◽  
2021 ◽  
Author(s):  
Jinjin Wang ◽  
Hong Shen ◽  
Riyi Yang ◽  
Kun Xie ◽  
Chao Zhang ◽  
...  

2020 ◽  
Vol 23 ◽  
pp. 685-689
Author(s):  
Kay Khaing Oo ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Piyasarn Praserthdam ◽  
Somchai Ratanathammaphan

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