Effect of substrate temperature on GaAs nanowires growth directly on Si (111) substrates by molecular beam epitaxy

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

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Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.04.027 ◽

2010 ◽

Vol 312 (14) ◽

pp. 2073-2077 ◽

Cited By ~ 26

Author(s):

C. Sartel ◽

D.L. Dheeraj ◽

F. Jabeen ◽

J.C. Harmand

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Arsenic Species ◽

Gaas Nanowires ◽

Nanowires Growth ◽

Kinetics Of

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Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.03.005 ◽

2017 ◽

Vol 477 ◽

pp. 217-220

Author(s):

Samatcha Vorathamrong ◽

Somchai Ratanathammaphan ◽

Somsak Panyakeow ◽

Piyasan Praserthdam ◽

Chiraporn Tongyam

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Molecular Beam ◽

Sio2 Layer ◽

Gaas Nanowires

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Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

MRS Proceedings ◽

10.1557/proc-241-199 ◽

1991 ◽

Vol 241 ◽

Author(s):

Bijan Tadayon ◽

Mohammad Fatemi ◽

Saied Tadayon ◽

F. Moore ◽

Harry Dietrich

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Substrate Temperature ◽

Molecular Beam ◽

Electrical Characterization ◽

Physical Characteristics ◽

Hall Measurements ◽

Undoped Material ◽

Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.01.032 ◽

2010 ◽

Vol 312 (9) ◽

pp. 1491-1495 ◽

Cited By ~ 4

Author(s):

Jie Zhao ◽

Yiping Zeng ◽

Chao Liu ◽

Yanbo Li

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Temperature Dependence ◽

Molecular Beam

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Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1131.16 ◽

2015 ◽

Vol 1131 ◽

pp. 16-19

Author(s):

Patchareewan Prongjit ◽

Samatcha Vorathamrong ◽

Somsak Panyakeow ◽

Chiraporn Tongyam ◽

Piyasan Prasertthdam ◽

...

Keyword(s):

Electron Microscope ◽

Molecular Beam Epitaxy ◽

Scanning Electron Microscope ◽

Structural Properties ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Si Substrate ◽

Growth Technique ◽

Gaas Nanowires ◽

Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

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