One-dimensional metallic grain boundary in transition metal dichalcogenides

2022 ◽  
Vol 203 ◽  
pp. 111115
Author(s):  
Shuhui Zhang ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Wei Wei
Keyword(s):  
Transition Metal ◽  
Grain Boundary ◽  
Transition Metal Dichalcogenides ◽  
One Dimensional ◽  
Metal Dichalcogenides

Chemical Selectivity at Grain Boundary Dislocations in Monolayer Mo1–xWxS2 Transition Metal Dichalcogenides

2017 ◽  
Vol 9 (35) ◽  
pp. 29438-29444 ◽  
Author(s):  
Ziqian Wang ◽  
Yuhao Shen ◽  
Shoucong Ning ◽  
Yoshikazu Ito ◽  
Pan Liu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundary ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Chemical Selectivity

scholarly journals 1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sridevi Krishnamurthi ◽  
Geert Brocks
Keyword(s):  
Transition Metal ◽  
Density Wave ◽  
Transition Metal Dichalcogenides ◽  
Spin Density Wave ◽  
Electric Polarization ◽  
Transition Metal Dichalcogenide ◽  
First Principles Calculations ◽  
One Dimensional ◽  
Structural Details ◽  
Metal Dichalcogenides

AbstractTwo-dimensional (2D) lateral heterojunctions between different transition metal dichalcogenides (TMDCs) have been realized in recent years. Homogeneous semiconducting TMDC layers are characterized by a topological invariant, their in-plane electric polarization. It suggests the possibility of one-dimensional (1D) metallic states at heterojunctions where the value of the invariant changes. We study such lateral 2D TMDC junctions by means of first-principles calculations and show that 1D metallic states emerge even in cases where the different materials are joined epitaxially. We find that the metallicity does not depend on structural details, but, as the invariant is protected by spatial symmetry only, it can be upset by breaking the symmetry. Indeed, 1D charge- and spin-density wave instabilities appear spontaneously, making 2D TMDC heterojunctions ideal systems for studying 1D systems.

One-dimensional transition metal dichalcogenides lateral heterostructures

2021 ◽  
Author(s):  
Jin-Wu Jiang
Keyword(s):  
Transition Metal ◽  
Electron Tunneling ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
High Quality ◽  
Light Emitting ◽  
One Dimensional ◽  
Metal Dichalcogenides ◽  
Established Technique

Heterostructure is a well-established technique to utilize different constituting materials to accomplish novel properties like efficient light-emitting and high-quality electron tunneling. Recent experiments have successfully synthesized one-dimensional van der Waals...

Mirror twin boundaries in MoSe2 monolayers as one dimensional nanotemplates for selective water adsorption

Nanoscale ◽  
2021 ◽  
Author(s):  
Jingfeng Li ◽  
Thomas Joseph ◽  
Mahdi Ghorbani-Asl ◽  
Sadhu Kolekar ◽  
Arkady V. Krasheninnikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
Water Adsorption ◽  
Transition Metal Dichalcogenides ◽  
Twin Boundaries ◽  
One Dimensional ◽  
Metal Dichalcogenides

Water adsorption on transition metal dichalcogenides is modified at mirror grain boundaries.

scholarly journals Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

APL Materials ◽  
2018 ◽  
Vol 6 (5) ◽  
pp. 056103 ◽  
Author(s):  
Ke Chen ◽  
Anupam Roy ◽  
Amritesh Rai ◽  
Hema C. P. Movva ◽  
Xianghai Meng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundary ◽  
Transition Metal Dichalcogenides ◽  
Boundary Edge ◽  
Carrier Recombination ◽  
Edge Defects ◽  
Metal Dichalcogenides
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