Mirror twin boundaries in MoSe2 monolayers as one dimensional nanotemplates for selective water adsorption

Nanoscale ◽  
2021 ◽  
Author(s):  
Jingfeng Li ◽  
Thomas Joseph ◽  
Mahdi Ghorbani-Asl ◽  
Sadhu Kolekar ◽  
Arkady V. Krasheninnikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
Water Adsorption ◽  
Transition Metal Dichalcogenides ◽  
Twin Boundaries ◽  
One Dimensional ◽  
Metal Dichalcogenides

Water adsorption on transition metal dichalcogenides is modified at mirror grain boundaries.

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

Observing Grain Boundaries in CVD-Grown Monolayer Transition Metal Dichalcogenides

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11401-11408 ◽  
Author(s):  
Thuc Hue Ly ◽  
Ming-Hui Chiu ◽  
Ming-Yang Li ◽  
Jiong Zhao ◽  
David J. Perello ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

One-dimensional metallic grain boundary in transition metal dichalcogenides

2022 ◽  
Vol 203 ◽  
pp. 111115
Author(s):  
Shuhui Zhang ◽  
Baibiao Huang ◽  
Ying Dai ◽  
Wei Wei
Keyword(s):  
Transition Metal ◽  
Grain Boundary ◽  
Transition Metal Dichalcogenides ◽  
One Dimensional ◽  
Metal Dichalcogenides

scholarly journals Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 803 ◽  
Author(s):  
Filippo Giannazzo ◽  
Emanuela Schilirò ◽  
Giuseppe Greco ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Force Microscopy ◽  
Transition Metal ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Transition Metal Dichalcogenides ◽  
Device Fabrication ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS2 for the realization of ambipolar transistors are also illustrated. Experiments on local conductivity mapping in monolayer MoS2 grown by chemical vapor deposition (CVD) on SiO2 substrates are discussed, providing a direct evidence of the resistance associated to the grain boundaries (GBs) between MoS2 domains. Finally, C-AFM provided an insight into the current transport phenomena in TMD-based heterostructures, including lateral heterojunctions observed within MoxW1–xSe2 alloys, and vertical heterostructures made by van der Waals stacking of different TMDs (e.g., MoS2/WSe2) or by CVD growth of TMDs on bulk semiconductors.

scholarly journals 1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sridevi Krishnamurthi ◽  
Geert Brocks
Keyword(s):  
Transition Metal ◽  
Density Wave ◽  
Transition Metal Dichalcogenides ◽  
Spin Density Wave ◽  
Electric Polarization ◽  
Transition Metal Dichalcogenide ◽  
First Principles Calculations ◽  
One Dimensional ◽  
Structural Details ◽  
Metal Dichalcogenides

AbstractTwo-dimensional (2D) lateral heterojunctions between different transition metal dichalcogenides (TMDCs) have been realized in recent years. Homogeneous semiconducting TMDC layers are characterized by a topological invariant, their in-plane electric polarization. It suggests the possibility of one-dimensional (1D) metallic states at heterojunctions where the value of the invariant changes. We study such lateral 2D TMDC junctions by means of first-principles calculations and show that 1D metallic states emerge even in cases where the different materials are joined epitaxially. We find that the metallicity does not depend on structural details, but, as the invariant is protected by spatial symmetry only, it can be upset by breaking the symmetry. Indeed, 1D charge- and spin-density wave instabilities appear spontaneously, making 2D TMDC heterojunctions ideal systems for studying 1D systems.

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