A new near-lossless EEG compression method using ANN-based reconstruction technique

2017 ◽  
Vol 87 ◽  
pp. 87-94 ◽  
Author(s):  
Behzad Hejrati ◽  
Abdolhossein Fathi ◽  
Fardin Abdali-Mohammadi
2015 ◽  
Vol 8 (3) ◽  
pp. 161
Author(s):  
Samuel Gideon

This research was conducted as a learning alternatives for study of CT (computed tomograpghy) imaging using image reconstruction technique which are inversion matrix, back projection and filtered back projection. CT imaging can produce images of objects that do not overlap. Objects more easily distinguishable although given the relatively low contrast. The image is generated on CT imaging is the result of reconstruction of the original object. Matlab allows us to create and write imaging algorithms easily, easy to undersand and gives applied and exciting other imaging features. In this study, an example cross-sectional image recon-struction performed on the body of prostate tumors using. With these methods, medical prac-titioner (such as oncology clinician, radiographer and medical physicist) allows to simulate the reconstruction of CT images which almost resembles the actual CT visualization techniques.Keywords : computed tomography (CT), image reconstruction, Matlab


2009 ◽  
Vol E92-C (3) ◽  
pp. 352-355
Author(s):  
Ki-Sang JUNG ◽  
Kang-Jik KIM ◽  
Young-Eun KIM ◽  
Jin-Gyun CHUNG ◽  
Ki-Hyun PYUN ◽  
...  

2019 ◽  
Vol 16 (2) ◽  
pp. 134-138
Author(s):  
N.V. Antsygin ◽  
R.R. Movsesyan ◽  
V.A. Bolsunovsky ◽  
A.A. Shikhranov ◽  
S.P. Shefer ◽  
...  

Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.


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