Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.


2001 ◽  
Vol 7 (S2) ◽  
pp. 796-797
Author(s):  
Lucille A. Giannuzzi

In a focused ion beam (FIB) instrument, ions (typically Ga+) obtained from a liquid metal ion source are accelerated down a column at energies up to ∽ 50 keV. The beam of ions is focused by electrostatic and octopole lens systems and the ion dose (and beam diameter) is controlled using real and/or virtual apertures. Beam sizes in FIB instruments on the order of 5-7 nm may be achieved.The versatility of the FIB instrument enables large regions of material (e.g., 500 μm3) to be removed at high beam currents in just a couple of minutes. Lower beam currents (i.e., beam diameters) are usually used to remove smaller amounts of material within the same time frame (e.g., ∽ 5μm3). The introduction of an organometallic gas in close proximity to the target allows for the deposition of metals, SiO2, and other materials, by an ion beam assisted chemical vapor deposition process.


1999 ◽  
Vol 5 (S2) ◽  
pp. 902-903
Author(s):  
F. Shaapur ◽  
D. Brazeau ◽  
B. Foran

Focused ion beam (FIB) thinning of materials to electron transparency is now a routine procedure for preparation of specimens for transmission electron microscopy (TEM) of microelectronic materials and devices. The nano-scale structural damage, including implantation and amorphization due to this ion milling process has been well investigated and documented. In this paper, we discuss the micro-scale structural damage observed in copper/low-k materials and our efforts to minimize the extent of the damage without compromising the overall specimen preparation time.Figure 1 shows an area-specific cross-sectional specimen prepared from a copper/low-k via-chain test structure using the FIB-milling technique. The procedure involved mechanical thinning of a transverse wafer sliver followed by FIB-milling the area of interest to electron transparency according to conventional steps and conditions' using a liquid Ga+ ion source FIB system. The evidence of structural damage in terms of melting and/or sputtering of the metallization is visible at different areas.


Author(s):  
Paul Tesch ◽  
Noel Smith ◽  
Noel Martin ◽  
Doug Kinion

Abstract Conventional focused ion beams (FIB) employing liquid metal ion sources (LMIS) are used to create site specific cross-sections for viewing subsurface features and performing 3D metrology on subsurface structure. Emerging applications incorporate novel materials as well as large structures that interface to decreasing IC dimensions and often require destructive physical analysis. This paper describes a novel instrument in which an inductively coupled plasma ion source is integrated onto a conventional FIB column. It compares this instrument to the existing LMIS FIBs and shows examples that illustrate the capabilities of this tool. This instrument retains the benefits of the conventional LMIS FIB such as high placement accuracy and the ability to immediately obtain high resolution images of the cross-section face without having to transfer it to another tool. It is capable of creating large cross-sections from 10 microns to 1mm in size at about 100 times faster than a conventional FIB.


Author(s):  
Michael Schindler ◽  
Keegan Weatherhead ◽  
Haley Mantha

Abstract Gunshot residue is emitted as fine particulate matter upon the ignition of percussion-sensitive explosives among other additives in a firearm barrel. The particulates condense from a vapor phase and contain material from the Pb-Sb-Ba-bearing primer, S-bearing gunpowder, and the Pb-bearing bullet fragments. Shooters can inhale or ingest the fine particulates which also attach to their hands, clothing, and other surfaces. Estimation of the bioavailability of the emitted toxic Pb- and Sb-bearing particulates requires detailed knowledge of their mineralogical composition and those of their weathering products. For this purpose, gunshot residue particulates have been collected from soils in front of a firing line of a shooting range in Ontario, Canada. Bulk mineralogical and chemical features of the soils have been characterized using X-ray powder diffraction, inductively coupled plasma-mass spectrometry, and scanning electron microscopy. The focused ion-beam technique has been used to extract a section containing numerous altered gunshot residue particulates from a soil grain. Subsequent transmission electron microscopy shows for the first time that gunshot residue particulates are composed of metallic δ-Pb, α-Sb, galena (PbS), and an unidentified Ba-bearing phase. Weathering of the gunshot residue particulates results in the formation of incidental nanoparticles (i.e., not purposely engineered to occur at the nanometer scale) in the form of δ-Pb, massicot, PbO, and galena. The formation and mobilization of some of these nanoparticles within the soil grain suggest that their release during the weathering of bullets and gunshot residue contributes to the release of Pb into the environment. Hydrocerussite, Pb3(CO3)2(OH)2, cerussite, PbCO3, and massicot and anglesite, PbSO4, are the major secondary Pb-phases in and around altered GSR particulates. These phases form during the weathering of metallic Pb, massicot, and galena nanoparticles in a Ca-carbonate rich environment. Secondary Sb-bearing phases are valentinite, Sb2O3, and amorphous Sb-Pb phases (Sb:Pb ratio = 2:1–4:1). The latter phases have partially replaced large proportions of the Ca-carbonates surrounding the gunshot residue particulates. The larger abundance of the amorphous Sb-Pb phases relative to valentinite suggests that their solubility most likely controls the release of Sb into the bulk soil. The SEM and TEM characterizations and chemical analyses of mineral surface coatings and the colloidal fraction of a leachate from the collected surficial soils indicate that Pb occurs predominantly in the colloidal fraction, is often associated with sulfate-bearing colloids, and is sequestered in sulfate and carbonate/hydroxide coatings.


1998 ◽  
Vol 4 (S2) ◽  
pp. 492-493 ◽  
Author(s):  
M.W. Phaneuf ◽  
J. Li ◽  
T. Malis

Focused Ion Beam or FIB systems have been used in integrated circuit production for some time. The ability to combine rapid, precision focused ion beam sputtering or gas-assisted ion etching with focused ion beam deposition allows for rapid-prototyping of circuit modifications and failure analysis of defects even if they are buried deep within the chip's architecture. Inevitably, creative TEM researchers reasoned that a FIB could be used to produce site specific parallel-sided, electron transparent regions, thus bringing about the rather unique situation wherein the specimen preparation device often was worth as much as the TEM itself.More recently, FIB manufacturers have concentrated on improving the resolution and imaging characteristics of these instruments, resulting in a more general-purpose characterization tool. The Micrion 2500 FIB system used in this study is capable of 4 nm imaging resolution using either secondary electron or secondary ions, both generated by a 50 kV liquid metal gallium ion source.


2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.


1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.


Sign in / Sign up

Export Citation Format

Share Document