Comparison of barrier properties for a superhydrophobic epoxy coating under different simulated corrosion environments

2016 ◽  
Vol 103 ◽  
pp. 230-241 ◽  
Author(s):  
Dawei Zhang ◽  
Hongchang Qian ◽  
Luntao Wang ◽  
Xiaogang Li
2019 ◽  
Vol 17 (1) ◽  
pp. 101-114 ◽  
Author(s):  
Nurul Husna Othman ◽  
Wan Zaireen Nisa Yahya ◽  
Mokhtar Che Ismail ◽  
Mazli Mustapha ◽  
Zi Kang Koi

2020 ◽  
Vol 144 ◽  
pp. 105660 ◽  
Author(s):  
Ali Dastgheib ◽  
Arman Zarebidaki ◽  
Mohammadreza Mohammadzadeh Attar

2018 ◽  
Vol 444 ◽  
pp. 511-521 ◽  
Author(s):  
Chunlin Chen ◽  
Yi He ◽  
Guoqing Xiao ◽  
Yunqin Xia ◽  
Hongjie Li ◽  
...  

2021 ◽  
Vol 2070 (1) ◽  
pp. 012192
Author(s):  
S Sreelekshmi ◽  
M Ananth Kumar

Abstract Reduced graphene oxide(rGO) has a lot of potential in the area of corrosion control of metals, because of its excellent barrier properties, dispersion capabilities, and impermeability. The current work hires on the corrosion resistance action of reduced graphene oxide(rGO) as an inhibitor for mild steel in simulated concrete pore solution. Here, three different nano rGO contained epoxy coatings were prepared by varying the percentage of rGO. The anticorrosion behaviour of rGO integrated epoxy composite coating was evaluated using open circuit potential and polarization studies. The results indicated that rGO nanoparticles were properly distributed in the epoxy coating and showed excellent barrier properties. Moreover, anti-corrosion processes for composite coatings improved by the addition of various percentages of rGO were apparently hypothesized, implying that epoxy coating containing 1.0 wt.% rGO showed better corrosion resistant behaviour in concrete pore solution medium containing 0.5M NaCl solution.


Author(s):  
B. Van Deurs ◽  
J. K. Koehler

The choroid plexus epithelium constitutes a blood-cerebrospinal fluid (CSF) barrier, and is involved in regulation of the special composition of the CSF. The epithelium is provided with an ouabain-sensitive Na/K-pump located at the apical surface, actively pumping ions into the CSF. The choroid plexus epithelium has been described as “leaky” with a low transepithelial resistance, and a passive transepithelial flux following a paracellular route (intercellular spaces and cell junctions) also takes place. The present report describes the structural basis for these “barrier” properties of the choroid plexus epithelium as revealed by freeze fracture.Choroid plexus from the lateral, third and fourth ventricles of rats were used. The tissue was fixed in glutaraldehyde and stored in 30% glycerol. Freezing was performed either in liquid nitrogen-cooled Freon 22, or directly in a mixture of liquid and solid nitrogen prepared in a special vacuum chamber. The latter method was always used, and considered necessary, when preparations of complementary (double) replicas were made.


Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.


Author(s):  
R. R. Warner

Keratinocytes undergo maturation during their transit through the viable layers of skin, and then abruptly transform into flattened, anuclear corneocytes that constitute the cellular component of the skin barrier, the stratum corneum (SC). The SC is generally considered to be homogeneous in its structure and barrier properties, and is often shown schematically as a featureless brick wall, the “bricks” being the corneocytes, the “mortar” being intercellular lipid. Previously we showed the outer SC was not homogeneous in its composition, but contained steep gradients of the physiological inorganic elements Na, K and Cl, likely originating from sweat salts. Here we show the innermost corneocytes in human skin are also heterogeneous in composition, undergoing systematic changes in intracellular element concentration during transit into the interior of the SC.Human skin biopsies were taken from the lower leg of individuals with both “good” and “dry” skin and plunge-frozen in a stirred, cooled isopentane/propane mixture.


2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.


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