Observation of polarization dependent excitonic luminescence in few-layered WS2 flakes

2021 ◽  
pp. 139012
Author(s):  
Rajarshi Royv ◽  
Sarthak Das ◽  
Nilesh Mazumder ◽  
Dipayan Roy ◽  
Kalyan.K. Chattopadhyay
Author(s):  
W. Hoyer ◽  
S.W. Koch ◽  
M. Kira ◽  
P. Brick ◽  
S. Chatterjee ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto

2015 ◽  
Vol 210 ◽  
pp. 706-711 ◽  
Author(s):  
E. Orabona ◽  
D. Pallotti ◽  
A. Fioravanti ◽  
S. Gherardi ◽  
M. Sacerdoti ◽  
...  

2002 ◽  
Vol 80 (16) ◽  
pp. 2907-2909 ◽  
Author(s):  
Giuliano Coli ◽  
K. K. Bajaj ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang

2003 ◽  
Vol 0 (7) ◽  
pp. 2716-2720
Author(s):  
T. V. Shubina ◽  
K. F. Karlsson ◽  
V. N. Jmerik ◽  
S. V. Ivanov ◽  
A. Kavokin ◽  
...  

2006 ◽  
Vol 957 ◽  
Author(s):  
Julio Mass ◽  
Manuel Avella ◽  
Juan Jiménez ◽  
Michael Callahan ◽  
E. Grant ◽  
...  

ABSTRACTHydrothermal ZnMgO crystals were studied by cathodoluminescence. The high energy shift of the excitonic luminescence demonstrates the Mg incorporation in the ZnO lattice in at a few percent. The spectral parameters of the luminescence emission show a marked dependence of the incorporation of defects and Mg on the growth facet. This growth sector selectivity shows similar trends to those observed in hydrothermal ZnO crystals. The in depth distribution of Mg was studied varying the acceleration voltage of the excitation e-beam, showing a slight accumulation of Mg close to the surface.


2002 ◽  
Vol 29 (10-12) ◽  
pp. 529-536 ◽  
Author(s):  
JOHN WILKINSON ◽  
GANG XIONG ◽  
K. B. UCER ◽  
R. T. WILLIAMS

1995 ◽  
Vol 7 (7) ◽  
pp. 1483-1491 ◽  
Author(s):  
L G Grigorjeva ◽  
E A Kotomin ◽  
D K Millers ◽  
R I Eglitis

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Siegle ◽  
A. Hoffmann ◽  
L. Eckey ◽  
C. Thomsen ◽  
T. Detchprohm ◽  
...  

ABSTRACTWe present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.


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