Probing Life And Death In The Glassy State Of Cryopreserved Seeds, Fern Spores And Pollen: Fundamental Research To Optimise Ex Situ Preservation.

Fluorapatite-mullite glass-ceramics have been shown to be bioactive in the cerammed state and the present study examines how they may be deposited on biomedical-grade titanium alloy substrates for orthopaedic applications. A simple deposition route was used for initial application of the material in the glassy state and it was then cerammed in-situ. This cheap and non-line-of-sight route produces well adherent coatings by virtue of a reaction between the coating and substrate during the ceramming step. Several characterization techniques including DSC and XRD have been used to determine the crystallization behaviour of the glass-ceramic ex-situ and electron microscopical techniques have been used to characterize glass-ceramic microstructures and the nature of the coating-substrate interfacial region.

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Testing and Validating Instruments for Feedstocks of Mineral Carbonation

10.5772/intechopen.101175 ◽

2021 ◽

Author(s):

Muhammad Imran Rashid

Keyword(s):

Reaction Mechanism ◽

Reaction Rate ◽

Ex Situ ◽

Mineral Carbonation ◽

Good Match ◽

Carbonation Reaction ◽

Calibration Curves ◽

Measuring Techniques ◽

Fundamental Research ◽

Heat Activation

Different feedstocks Dunite, Olivine and Lizardite are examined in this research using various measuring techniques such as TGA-MS, XRD and Quantitative XRD and EDS. Quantitative XRD results matched with TGA-MS results. Malvern Mastersizer, EDS and QXRD results also showed a good match regarding the individuality of results which are shown graphically. TGA-MS calibration curves example is provided. Matching the results of different measuring techniques is a key to fundamental research. Comparison of the reactivity of dunite, soaked dunite, heat-activated dunite and lizardite and raw dunite soaked has been performed. TGA-MS and QXRD results match each other. Malvern Mastersizer, EDS and QXRD results match with their individual results indicating the instrument’s reliability. Semi-Quantitative XRD results authenticity is EXCELLENT. TGA-MS results match with QXRD is excellent. Mineral carbonation converts CO2 into stable mineral carbonates. This research explores the utilisation of serpentinised dunite (which is comprised of 61% lizardite) as a potential feedstock for mineral carbonation. Heat activation, ex-situ regrinding and concurrent grinding techniques were employed to enhance the reaction rate and yield, and to provide information on the carbonation reaction mechanism. Silica-rich layers that appeared during reference experiments were disrupted using concurrent grinding and significantly higher magnesite yields and Mg extractions were obtained.

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Fundamental Research into Thin Films in a Developing Country

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100095753 ◽

1972 ◽

Vol 30 ◽

pp. 500-501

Author(s):

J.A. Eades ◽

E. Grünbaum

Keyword(s):

Thin Films ◽

Growth Process ◽

Empirical Process ◽

Nucleation And Growth ◽

Research Groups ◽

Film Research ◽

Fundamental Research ◽

Controlled Deposition ◽

The One ◽

The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100150046 ◽

1993 ◽

Vol 51 ◽

pp. 842-843

Author(s):

K. Barmak

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Transformations ◽

Analytical Electron Microscopy ◽

Ex Situ ◽

Multilayer Thin Films ◽

Absolute Concentration ◽

Analytical Electron ◽

Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154287 ◽

1989 ◽

Vol 47 ◽

pp. 462-463

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Diffraction ◽

High Vacuum ◽

High Energy ◽

Energy Electron ◽

Ultra High Vacuum ◽

Ex Situ ◽

Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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Interfacial properties of GaSb/InAs superlattices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149969 ◽

1993 ◽

Vol 51 ◽

pp. 826-827

Author(s):

M. E. Twigg ◽

B. R. Bennett ◽

J. R. Waterman ◽

J. L. Davis ◽

B. V. Shanabrook ◽

...

Keyword(s):

Gaas Substrate ◽

Molecular Beam ◽

Infrared Detector ◽

Interfacial Properties ◽

Ex Situ ◽

X Ray Diffraction ◽

Absorption Coefficients ◽

X Ray ◽

Short Period ◽

High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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