Fabrication of a field plate structure for diamond Schottky barrier diodes

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.963 ◽

2009 ◽

Vol 615-617 ◽

pp. 963-966 ◽

Cited By ~ 9

Author(s):

Taku Horii ◽

Tomihito Miyazaki ◽

Yu Saito ◽

Shin Hashimoto ◽

Tatsuya Tanabe ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Figure Of Merit ◽

Schottky Barrier Diodes ◽

Field Plate ◽

Forward Current ◽

Low Dislocation Density ◽

Current Voltage ◽

Dislocation Densities ◽

Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

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Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2 /4H-nSiC Schottky barrier diodes

physica status solidi (a) ◽

10.1002/pssa.201532454 ◽

2015 ◽

Vol 213 (1) ◽

pp. 193-202 ◽

Cited By ~ 15

Author(s):

Vibhor Kumar ◽

Nando Kaminski ◽

Anup Singh Maan ◽

Jamil Akhtar

Keyword(s):

Schottky Barrier ◽

Frequency Dispersion ◽

Guard Ring ◽

Schottky Barrier Diodes ◽

Field Plate

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Field plate engineering for GaN-based Schottky barrier diodes

Journal of Semiconductors ◽

10.1088/1674-4926/34/5/054007 ◽

2013 ◽

Vol 34 (5) ◽

pp. 054007 ◽

Cited By ~ 5

Author(s):

Yong Lei ◽

Hongbiao Shi ◽

Hai Lu ◽

Dunjun Chen ◽

Rong Zhang ◽

...

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Field Plate

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Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.865 ◽

2007 ◽

Vol 556-557 ◽

pp. 865-868

Author(s):

Gheorghe Brezeanu ◽

M. Brezeanu ◽

F. Udrea ◽

G. Amaratunga ◽

C. Boianceanu ◽

...

Keyword(s):

Silicon Carbide ◽

Schottky Barrier ◽

Schottky Diodes ◽

Oxide Thickness ◽

Electrical Performance ◽

Schottky Barrier Diodes ◽

Field Plate ◽

Plate Technique ◽

First Time

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

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