Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2 /4H-nSiC Schottky barrier diodes

2015 ◽  
Vol 213 (1) ◽  
pp. 193-202 ◽  
Author(s):  
Vibhor Kumar ◽  
Nando Kaminski ◽  
Anup Singh Maan ◽  
Jamil Akhtar
Keyword(s):  
Schottky Barrier ◽  
Frequency Dispersion ◽  
Guard Ring ◽  
Schottky Barrier Diodes ◽  
Field Plate

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Fabrication of a field plate structure for diamond Schottky barrier diodes

2009 ◽  
Vol 18 (2-3) ◽  
pp. 292-295 ◽  
Author(s):  
Kazuhiro Ikeda ◽  
Hitoshi Umezawa ◽  
Natsuo Tatsumi ◽  
Kumaresan Ramanujam ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Plate Structure ◽  
Field Plate

The guard-ring termination for the high-voltage SiC Schottky barrier diodes

1995 ◽  
Vol 16 (7) ◽  
pp. 331-332 ◽  
Author(s):  
K. Ueno ◽  
T. Urushidani ◽  
K. Hashimoto ◽  
Y. Seki
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Guard Ring ◽  
Schottky Barrier Diodes

Field plate engineering for GaN-based Schottky barrier diodes

2013 ◽  
Vol 34 (5) ◽  
pp. 054007 ◽  
Author(s):  
Yong Lei ◽  
Hongbiao Shi ◽  
Hai Lu ◽  
Dunjun Chen ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Field Plate

Etch-induced MOS guard-ring-protected schottky-barrier diodes

1984 ◽  
Vol 131 (2) ◽  
pp. 63 ◽  
Author(s):  
R.N. Sreenath ◽  
M. Mohan Chandra ◽  
G. Suryan
Keyword(s):  
Schottky Barrier ◽  
Guard Ring ◽  
Schottky Barrier Diodes

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

2007 ◽  
Vol 556-557 ◽  
pp. 865-868
Author(s):  
Gheorghe Brezeanu ◽  
M. Brezeanu ◽  
F. Udrea ◽  
G. Amaratunga ◽  
C. Boianceanu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Plate Technique ◽  
First Time

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure

2021 ◽  
Vol 151 ◽  
pp. 106820
Author(s):  
Jiyu Zhou ◽  
Liang He ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Liuan Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Guard Ring ◽  
Schottky Barrier Diodes
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