Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts

Displays ◽  
2007 ◽  
Vol 28 (3) ◽  
pp. 129-132 ◽  
Author(s):  
Y. Yao ◽  
C. Jin ◽  
Z. Dong ◽  
Z. Sun ◽  
S.M. Huang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

2003 ◽  
Vol 15 (5) ◽  
pp. 649-651 ◽  
Author(s):  
Shyi-Ming Pan ◽  
Ru-Chin Tu ◽  
Yu-Mei Fan ◽  
R.-C. Yeh ◽  
Jung-Tsung Hsu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

2005 ◽  
Vol 17 (2) ◽  
pp. 291-293 ◽  
Author(s):  
J.-O. Song ◽  
Dong-Seok Leem ◽  
Joon Seop Kwak ◽  
Y. Park ◽  
S.W. Chae ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Luminous Intensity ◽  
Light Emitting ◽  
P Type

scholarly journals Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Zhanxu Chen ◽  
Wenjie Liu ◽  
Wei Wan ◽  
Gengyan Chen ◽  
Yongzhu Chen ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Three Dimensional ◽  
Light Output ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Indium Tin Oxide Electrode ◽  
Light Emitting ◽  
Ito Electrode

The indium tin oxide (ITO) has been widely applied in light emitting diodes (LEDs) as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE) of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

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