Enhancement of the light output of GaN-based light-emitting diodes using surface-textured indium-tin-oxide transparent ohmic contacts

Displays ◽  
2008 ◽  
Vol 29 (3) ◽  
pp. 254-259 ◽  
Author(s):  
S.M. Huang ◽  
Y. Yao ◽  
C. Jin ◽  
Z. Sun ◽  
Z.J. Dong
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Emitting

scholarly journals Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Zhanxu Chen ◽  
Wenjie Liu ◽  
Wei Wan ◽  
Gengyan Chen ◽  
Yongzhu Chen ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Three Dimensional ◽  
Light Output ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Indium Tin Oxide Electrode ◽  
Light Emitting ◽  
Ito Electrode

The indium tin oxide (ITO) has been widely applied in light emitting diodes (LEDs) as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE) of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047205 ◽  
Author(s):  
Huang Jun-Yi ◽  
Fan Guang-Han ◽  
Zheng Shu-Wen ◽  
Niu Qiao-Li ◽  
Li Shu-Ti ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Emitting ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts

Displays ◽  
2007 ◽  
Vol 28 (3) ◽  
pp. 129-132 ◽  
Author(s):  
Y. Yao ◽  
C. Jin ◽  
Z. Dong ◽  
Z. Sun ◽  
S.M. Huang
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Sang Hyun Jung ◽  
Keun Man Song ◽  
Young Su Choi ◽  
Hyeong-Ho Park ◽  
Hyun-Beom Shin ◽  
...  
Keyword(s):  
Circular Hole ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inductively Coupled Plasma ◽  
Light Emitting Diodes ◽  
Hexagonal Lattice ◽  
Light Output ◽  
Light Extraction Efficiency ◽  
Output Intensity ◽  
Light Emitting

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

2003 ◽  
Vol 15 (5) ◽  
pp. 649-651 ◽  
Author(s):  
Shyi-Ming Pan ◽  
Ru-Chin Tu ◽  
Yu-Mei Fan ◽  
R.-C. Yeh ◽  
Jung-Tsung Hsu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode

2011 ◽  
Vol 19 (23) ◽  
pp. 23111 ◽  
Author(s):  
Tae Hoon Seo ◽  
Kang Jea Lee ◽  
Ah Hyun Park ◽  
Chang-Hee Hong ◽  
Eun-Kyung Suh ◽  
...  
Keyword(s):  
Output Power ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Output ◽  
Light Output Power ◽  
Current Spreading ◽  
Light Emitting

Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

2006 ◽  
Vol 21 (5) ◽  
pp. 594-597 ◽  
Author(s):  
Hyun-Gi Hong ◽  
Seok-Soon Kim ◽  
Dong-Yu Kim ◽  
Takhee Lee ◽  
June-O Song ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Output ◽  
Light Emitting ◽  
Oxide Electrodes
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