scholarly journals Determination of ice interface temperature, sublimation rate and the dried product resistance, and its application in the assessment of microcollapse using through-vial impedance spectroscopy

2020 ◽  
Vol 152 ◽  
pp. 144-163
Author(s):  
Yowwares Jeeraruangrattana ◽  
Geoff Smith ◽  
Evgeny Polygalov ◽  
Irina Ermolina
Keyword(s):  
Impedance Spectroscopy ◽  
Interface Temperature ◽  
Sublimation Rate ◽  
Product Resistance

scholarly journals Determination of bimolecular recombination constants in organic double-injection devices using impedance spectroscopy

2019 ◽  
Vol 114 (12) ◽  
pp. 123301 ◽  
Author(s):  
Makoto Takada ◽  
Takahiro Mayumi ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Impedance Spectroscopy ◽  
Double Injection ◽  
Bimolecular Recombination

Freezing in Silicon at Large Undercooling

1989 ◽  
Vol 157 ◽  
Author(s):  
P.A. Stolk ◽  
A. Polman ◽  
W.C. Sinke
Keyword(s):  
Interface Temperature ◽  
Limiting Factor ◽  
Time Resolved ◽  
Large Undercooling ◽  
Explosive Crystallization ◽  
Crystallization Speed ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Rate Limiting

ABSTRACTPulsed laser irradiation is used to induce epitaxial explosive crystallization of amorphous silicon layers buried in a (100) oriented crystalline matrix. This process is mediated by a self-propagating liquid layer. Time-resolved determination of the crystallization speed combined with numerical calculation of the interface temperature shows that freezing in silicon saturates at 16 m/s for large undercooling (> 130 K). A comparison between data and different models for melting and freezing indicates that the crystallization behavior at large undercooling can be described correctly if the rate-limiting factor is assumed to be diffusion in liquid Si at the solid/liquid interface.

Determination of Electrically Active Defect Profiles in Semiconductors Using a Photoelectrochemical Technique

1986 ◽  
Vol 82 ◽  
Author(s):  
F.D. Gealy ◽  
H.L. Tuller
Keyword(s):  
Impedance Spectroscopy ◽  
Liquid Electrolyte ◽  
Profile Measurement ◽  
Acceptor Concentration ◽  
Defect Profile ◽  
Profile Depth ◽  
Charge Capacitance ◽  
Substitutional Impurities ◽  
Good Agreement

ABSTRACTElectrically active defects are common in semiconductors. Such defects include easily ionized substitutional impurities, vacancies, and interstitials which can act as shallow donors or acceptors. If one type of defect predominates, its concentration corresponds directly to the local donor or acceptor concentration. Consequently, measurement of a carrier profile in a nonhomogeneous semiconductor is effectively the same as measurement of the defect profile.The photoelectrochemical profiling technique allows for carrier profile measurement with submicrometer spatial resolution. The sample is profiled by photoetching, then carrier measurement, and iterating this procedure until the desired profile depth is obtained.Derivation of the space charge capacitance by impedance spectroscopy is discussed. An analysis of the P-doped Si-liquid electrolyte interface is presented. Phosphorous diffusivity coefficients in good agreement with literature values are derived from photoelectrochemical derived profiles.

scholarly journals Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy

2014 ◽  
Vol 104 (6) ◽  
pp. 063504 ◽  
Author(s):  
Arup K. Rath ◽  
Tania Lasanta ◽  
Maria Bernechea ◽  
Silke L. Diedenhofen ◽  
Gerasimos Konstantatos
Keyword(s):  
Impedance Spectroscopy ◽  
Quantum Dot ◽  
Carrier Lifetime ◽  
Colloidal Quantum Dot

Experimental and Numerical Study of the Cutting Temperature during the Turning of the C45 Steel

2016 ◽  
Vol 823 ◽  
pp. 507-512
Author(s):  
Mourad Abdelkrim ◽  
Mourad Brioua ◽  
Abderrahim Belloufi ◽  
Abdelhafid Gherfi
Keyword(s):  
Numerical Study ◽  
Digital Simulation ◽  
Cutting Temperature ◽  
Medium Carbon Steel ◽  
Simulation Software ◽  
Interface Temperature ◽  
Work Piece ◽  
Turning Process

In machining operation, the quality of surface finish is an important requirement for many turned work pieces. cutting temperature is one of the most important parameters in determining the cutting performance and tool life. the objective for this work is to estimate the cutting temperature in 3D model on tool-chip interface and the interface temperature during turning process, using the digital simulation software COMSOL Multiphysics.The tool–chip interface temperature results obtained from experimental results by using C45 medium carbon steel work piece with natural contact tools, without the application of cooling and lubricating agents and a K type thermocouple technique was used for estimating cutting temperatures in a turning operation.This procedure facilitates the determination of the temperature at tool-chip interface in dry turning process, which is still a challenge for existing experimental and numerical methods.

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