Role of nitrogen in the active–passive transition behavior of binary Fe–Cr alloy system

The alloy system Al–Li–Cu was investigated extensively over the composition range 5.8–8 Al–Cu–3Li to develop a detailed understanding of the formation and properties of the icosahedral phase, known as T2. Material from the various charges was analyzed by optical and electron microscopy, energy dispersive x-ray analysis, differential thermal analysis, and differential scanning calorimetry. The role of the melt composition and the solidification velocity were found to be crucial in determining the micro- and macrostructure and the existence of the icosahedral phase. A pseudobinary phase diagram for the region around Al6CuLi3, is presented based on these analyses. Based on this phase diagram the largest single icosahedral crystals of Al5.1CuLi3 yet reported, with diameters greater than 1 cm, were produced by Bridgman methods.

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The Role of the Si Network to the Stabilization of Hardening Precipitates in the Al-Mg-Si(-Cu) Alloy System

ICAA13: 13th International Conference on Aluminum Alloys ◽

10.1002/9781118495292.ch43 ◽

2012 ◽

pp. 279-284

Author(s):

Fleming J.H. Ehlers ◽

Sigurd Wenner ◽

Sigmund J. Anderson ◽

Calin D. Marioara ◽

R. Holmestad

Keyword(s):

Alloy System ◽

Cu Alloy

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Anomalous glass transition behavior in Cu–Zr–Sn alloy system

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2011.01.094 ◽

2011 ◽

Vol 509 ◽

pp. S52-S55 ◽

Cited By ~ 4

Author(s):

E.S. Park ◽

M. Ohnuma ◽

D.H. Kim

Keyword(s):

Glass Transition ◽

Alloy System ◽

Transition Behavior

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Octahedral and Porous Spherical Ordered LiNi0.5Mn1.5O4 Spinel: the Role of Morphology on Phase Transition Behavior and Electrode/Electrolyte Interfacial Properties

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b11187 ◽

2018 ◽

Vol 10 (37) ◽

pp. 31795-31803 ◽

Cited By ~ 8

Author(s):

Ying Luo ◽

Yixiao Zhang ◽

Liqin Yan ◽

Jingying Xie ◽

Taolin Lv

Keyword(s):

Phase Transition ◽

Interfacial Properties ◽

Phase Transition Behavior ◽

Transition Behavior

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The role of alloying elements on the structural, mechanical and thermodynamic properties of Al3X binary alloy system (X = Mg, Sc and Zr): first principle calculations

Materials Research Express ◽

10.1088/2053-1591/aa9485 ◽

2017 ◽

Vol 4 (11) ◽

pp. 116502 ◽

Cited By ~ 2

Author(s):

F Bakare ◽

M I Babalola ◽

B E Iyorzor

Keyword(s):

Thermodynamic Properties ◽

Binary Alloy ◽

Alloy System ◽

Alloying Elements ◽

First Principle ◽

First Principle Calculations ◽

Binary Alloy System

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[CoII(phimpy)2](ClO4)2and [CoII(ipimpy)2](ClO4)2: New Cobalt(II) Spin Crossover Compounds, and the Role of the Ligand Flexibility in Spin Transition Behavior

Chemistry Letters ◽

10.1246/cl.2003.882 ◽

2003 ◽

Vol 32 (10) ◽

pp. 882-883 ◽

Cited By ~ 6

Author(s):

Gergely Juhász ◽

Shinya Hayami ◽

Katsuya Inoue ◽

Yonezo Maeda

Keyword(s):

Spin Crossover ◽

Spin Transition ◽

Transition Behavior

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Influence of Au on Ge Crystallization and Its Thermoelectric Properties in a Au-induced Ge Crystallization Technique

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v14i2.7421 ◽

2018 ◽

Vol 14 (2) ◽

pp. 5460-5466

Author(s):

Shanthi Selvaraj ◽

Faizan Khan ◽

Shunsuke Nishino ◽

Omprakash Muthusamy ◽

Tsunehiro Takeuchi ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Eutectic Point ◽

Alloy System ◽

Metal Catalyst ◽

Au Catalyst ◽

Precursor Material ◽

20 Nm ◽

Induced Crystallization

Poly-crystalline Ge (pc-Ge) thin films were prepared on a SiO2/Si substrate using Au-induced crystallization (GIC) of amorphous Ge (a-Ge) with an annealing temperature around the eutectic point of Au-Ge alloy system (361ÂºC) in order to shorten the annealing time. Bilayer thin films of Au (20 nm)/a-Ge (100 nm) were used as a precursor material and annealed at 300, 400, and 500 ÂºC for 60 min, which successfully leads to the formation of pc-Ge layers. Characterizing the prepared Ge layers, the crystallographic properties indicated that the metal catalyst Au plays a notable role of enhancing both the crystallization and the island formation of Ge layers. It was also shown that the pc-Ge hardly contains Au atoms. Therefore, the Seebeck coefficient was hardly influenced by Au atoms since they do not act as a carrier source. In addition, the thermal conductivity of the pc-Ge film prepared by the GIC method was higher than that formed without Au, which is not due to the Au catalyst itself but due to the crystallinity of Ge film enhanced by the Au atoms.

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