Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

2018 ◽  
Vol 271 ◽  
pp. 666-676 ◽  
Author(s):  
Xu Yang ◽  
Rongyan Sun ◽  
Yuji Ohkubo ◽  
Kentaro Kawai ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Oxidation Mechanism ◽  
Mechanical Polishing ◽  
Electrochemical Mechanical Polishing

scholarly journals Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)

2022 ◽  
Author(s):  
XIAOZHE YANG ◽  
Xu Yang ◽  
Haiyang Gu ◽  
Kentaro Kawai ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Current Density ◽  
Removal Rate ◽  
Underlying Mechanism ◽  
Mechanical Polishing ◽  
Utilization Efficiency ◽  
Side Reactions ◽  
Electrochemical Mechanical Polishing ◽  
Sic Wafer ◽  
Oxidation System

Abstract Slurryless electrochemical mechanical polishing (ECMP) is very effective in the polishing of silicon carbide (SiC) wafers. To achieve a high material removal rate (MRR) of SiC wafer using ECMP with low electrical energy loss, charge utilization efficiency in the anodic oxidation of the SiC surface was investigated and the underlying mechanism was clarified by modeling the anodic oxidation system of SiC in 1 wt% NaCl aqueous solution. The charge utilization efficiency in the anodic oxidation of SiC was found to be constant when the current density was less than 20 mA/cm2 and significantly decreased when the current density was greater than 30 mA/cm2, resulting in a significant reduction in the MRR. Modeling of the anodic oxidation system indicates that the charge utilization efficiency depended on the potential applied on the SiC surface: the oxidation of SiC occupied the dominant position in the anodizing system when the potential is lower than 25 V vs Ag|AgCl, charge utilization efficiency greatly decreased when the applied potential was greater than 25 V owing to the occurrence of oxidations of the H2O and Cl-. This research provides both a theoretical and practical foundation for using ECMP to polish SiC wafers.

Experimental Research of Electrochemical Mechanical Polishing (ECMP) for Micro Tool Electrode

2011 ◽  
Vol 314-316 ◽  
pp. 1846-1850 ◽  
Author(s):  
Shuai Guo ◽  
Z.N Guo ◽  
Hong Ping Luo ◽  
Wen Cai Gu
Keyword(s):  
Experimental Research ◽  
Process Parameters ◽  
Mechanical Polishing ◽  
Working Fluid ◽  
Tool Electrode ◽  
Electrical Parameters ◽  
Electrochemical Mechanical Polishing ◽  
Major Process ◽  
Micro Tool ◽  
Quantitative Analyses

The mechanism of the elctrochemical mechanical polishing (ECMP) technology for micro tool electrode was investigated. In this paper, suitable major process parameters on the surface quality were evaluated, the major parameters contains electrical parameters, machining gap, the working fluid and other factors. In quantitative analyses, the process of the ECMP technology were conducted. The roughness of the workpiece was reduced from a relatively high value to a mirror effect.

Electrochemical mechanical polishing of thin film solar cell flexible stainless steel substrate

2016 ◽  
Vol 24 (2) ◽  
pp. 343-349 ◽  
Author(s):  
张克华 ZHANG Ke-hua ◽  
石 栋 SHI Dong ◽  
刘润之 LIU Run-zhi ◽  
肖志兰 XIAO Zhi-lan ◽  
程光明 CHENG Guang-ming
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Mechanical Polishing ◽  
Electrochemical Mechanical Polishing
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