A micro/nano-scale Timoshenko-Ehrenfest beam model for bending, buckling and vibration analyses based on doublet mechanics theory

2021 ◽  
Vol 86 ◽  
pp. 104199
Author(s):  
Ufuk Gul ◽  
Metin Aydogdu
2017 ◽  
Vol 76 (10) ◽  
pp. 865-871
Author(s):  
V. P. Makhniy ◽  
P. P. Horley ◽  
A. M. Slyotov

2009 ◽  
Vol 37 (2) ◽  
pp. 62-102 ◽  
Author(s):  
C. Lecomte ◽  
W. R. Graham ◽  
D. J. O’Boy

Abstract An integrated model is under development which will be able to predict the interior noise due to the vibrations of a rolling tire structurally transmitted to the hub of a vehicle. Here, the tire belt model used as part of this prediction method is first briefly presented and discussed, and it is then compared to other models available in the literature. This component will be linked to the tread blocks through normal and tangential forces and to the sidewalls through impedance boundary conditions. The tire belt is modeled as an orthotropic cylindrical ring of negligible thickness with rotational effects, internal pressure, and prestresses included. The associated equations of motion are derived by a variational approach and are investigated for both unforced and forced motions. The model supports extensional and bending waves, which are believed to be the important features to correctly predict the hub forces in the midfrequency (50–500 Hz) range of interest. The predicted waves and forced responses of a benchmark structure are compared to the predictions of several alternative analytical models: two three dimensional models that can support multiple isotropic layers, one of these models include curvature and the other one is flat; a one-dimensional beam model which does not consider axial variations; and several shell models. Finally, the effects of internal pressure, prestress, curvature, and tire rotation on free waves are discussed.


Author(s):  
Dong Meng ◽  
Amir Afshar ◽  
Randa Bassou ◽  
David S. Thompson ◽  
Jing Zong ◽  
...  

Author(s):  
V. Suganya ◽  
V. Anuradha

Encapsulation is a process of enclosing the substances within an inert material which protects from environment as well as control drug release. Recently, two type of encapsulation has been performed in several research. Nanoencapsulation is the coating of various substances within another material at sizes on the nano scale. Microencapsulation is similar to nanoencapsulation aside from it involving larger particles and having been done for a greater period of time than nanoencapsulation. Encapsulation is a new technology that has wide applications in pharmaceutical industries, agrochemical, food industries and cosmetics. In this review, the difference between micro and nano encapsulation has been explained. This article gives an overview of different methods and reason for encapsulation. The advantages and disadvantages of micro and nano encapsulation technology were also clearly mentioned in this paper.


Author(s):  
Stuart Friedman ◽  
Oskar Amster ◽  
Yongliang Yang ◽  
Fred Stanke

Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip [1]. sMIM provides the real and imaginary impedance (Re(Z) and Im(Z)) of the probe-sample interface. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM, we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, variations in the depletion-layer geometry. An existing technique for characterizing doped semiconductors, scanning capacitance microscopy, modulates the tip-sample bias and detects the tip-sample capacitance with a lock-in amplifier. A previous study compares sMIM to SCM and highlights the additional capabilities of sMIM [2], including examples of nano-scale capacitance-voltage curves. In this paper we focus on the detailed mechanisms and capabilities of the nano-scale C-V curves and the ability to extract semiconductor properties from them. This study includes analytical and finite element modeling of tip bias dependent depletion-layer geometry and impedance. These are compared to experimental results on reference samples for both doped Si and GaN doped staircases to validate the systematic response of the sMIM-C (capacitive) channel to the doping concentration.


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