A green-yellow phosphor Mg1.94-xAl3.96Si5.04O18: 0.06Ce3+, xTb3+ with thermal anti-quenching property

Optik ◽  
2020 ◽  
Vol 217 ◽  
pp. 164809
Author(s):  
Xiao-gang Zhang ◽  
Cong Zhao ◽  
Shi-xiu Cao ◽  
Li-chun Dong ◽  
Lei Liu ◽  
...  
Keyword(s):  
Yellow Phosphor

Y2Si4N6C:Ce3+ carbidonitride green-yellow phosphors: novel synthesis, photoluminescence properties, and applications

2017 ◽  
Vol 5 (24) ◽  
pp. 6061-6070 ◽  
Author(s):  
Jieqiong Wan ◽  
Qian Liu ◽  
Guanghui Liu ◽  
Zhenzhen Zhou ◽  
Rong-Jun Xie
Keyword(s):  
Carbothermal Reduction ◽  
Photoluminescence Properties ◽  
Yellow Phosphor ◽  
Novel Synthesis

The carbidonitride Y2Si4N6C:Ce3+ green-yellow phosphor was synthesized via a novel acid-driven carbonization and carbothermal reduction nitridation method (ADC–CRN).

Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by QDs@Silica-on-Chip Structure

2018 ◽  
Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Xiao Wei Sun ◽  
Xingjian Yu ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Temperature Stability ◽  
Phosphor Layer ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
Working Temperature ◽  
On Chip ◽  
White Light Emitting Diodes ◽  
Color Rendering

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs’ poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs’ temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.

Luminescence Characteristics of Mg2+·Ba2+Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes

2007 ◽  
Vol 44 (3) ◽  
pp. 147-151 ◽  
Author(s):  
Kyoung-Jae Choi ◽  
Soon-Duk Jee ◽  
Chang-Hae Kim ◽  
Sang-Hyuk Lee ◽  
Ho-Kun Kim
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
Luminescence Characteristics ◽  
Co Doped

Synthesis and warm-white LED applications of an efficient narrow-band red emitting phosphor, Rb2ZrF6:Mn4+

2017 ◽  
Vol 5 (29) ◽  
pp. 7253-7261 ◽  
Author(s):  
L. Y. Wang ◽  
E. H. Song ◽  
Y. Y. Zhou ◽  
T. T. Deng ◽  
S. Ye ◽  
...  
Keyword(s):  
Narrow Band ◽  
Precipitation Method ◽  
White Led ◽  
Red Phosphor ◽  
Yellow Phosphor ◽  
Co Precipitation ◽  
Red Emitting Phosphor

Phosphor Rb2ZrF6:Mn4+has been synthesizedviaa co-precipitation method. Series of WLEDs were fabricated by combining YAG:Ce3+yellow phosphor and different amount of Rb2ZrF6:Mn4+red phosphor with InGaN blue chips.

White-electroluminescent device with horizontally patterned blue/yellow phosphor-layer structure

2007 ◽  
Vol 127 (2) ◽  
pp. 531-533 ◽  
Author(s):  
Boo Won Park ◽  
Nam Sik Choi ◽  
Kwang Won Park ◽  
So Mo Son ◽  
Jong Su Kim ◽  
...  
Keyword(s):  
Layer Structure ◽  
Phosphor Layer ◽  
Yellow Phosphor ◽  
Electroluminescent Device

Two Ce3+ centers induced broadband emission in Y3Si6N11:Ce3+ yellow phosphor

2018 ◽  
Vol 47 (46) ◽  
pp. 16723-16728 ◽  
Author(s):  
Dashuai Sun ◽  
Liangliang Zhang ◽  
Zhendong Hao ◽  
Xia Zhang ◽  
Guo-Hui Pan ◽  
...  
Keyword(s):  
Emission Band ◽  
Emission Center ◽  
Broad Emission Band ◽  
Yellow Phosphor ◽  
Broadband Emission ◽  
Broad Emission

A Ce2 emission center was found in Y3Si6N11:Ce3+ and the broad emission band was successfully decomposed into Ce1 and Ce2.

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