Effect of different buffer layers on the microstructure and dielectric properties of BaTiO3 thin films grown on Si substrates

2009 ◽  
Vol 477 (1-2) ◽  
pp. 560-564 ◽  
Author(s):  
Liang Qiao ◽  
Xiaofang Bi
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Buffer Layers ◽  
Si Substrates

Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers

2007 ◽  
Vol 18 (3-4) ◽  
pp. 305-309 ◽  
Author(s):  
Hyun-Suk Kim ◽  
Tae-Seon Hyun ◽  
Ho-Gi Kim ◽  
Tae-Soon Yun ◽  
Jong-Chul Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Buffer Layers ◽  
Si Substrates

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Effective Buffer Structures and Dielectric Properties of Epitaxial Pb(Mg1/3Nb2/3)O3 Thin Films on Si Substrates

2003 ◽  
Vol 248 ◽  
pp. 65-68 ◽  
Author(s):  
Tomoaki Yamada ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani ◽  
Masao Kondo ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Si Substrates ◽  
Effective Buffer

Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

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