CdI2 structure type as potential thermoelectric materials: Synthesis and high temperature thermoelectric properties of the solid solution TiSxSe2−x

2012 ◽  
Vol 521 ◽  
pp. 121-125 ◽  
Author(s):  
Franck Gascoin ◽  
Nunna Raghavendra ◽  
Emmanuel Guilmeau ◽  
Yohann Bréard
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Structure Type ◽  
Materials Synthesis

High-Temperature Thermoelectric Properties of (1 − x) SrTiO3 − (x) La1/3NbO3 Ceramic Solid Solution

2014 ◽  
Vol 44 (6) ◽  
pp. 1803-1808 ◽  
Author(s):  
Deepanshu Srivastava ◽  
F. Azough ◽  
M. Molinari ◽  
S. C. Parker ◽  
R. Freer
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Ceramic Solid Solution

scholarly journals High Temperature Thermoelectric Properties of the Solid-Solution Zintl Phase Eu11Cd6–xZnxSb12

2015 ◽  
Vol 27 (12) ◽  
pp. 4413-4421 ◽  
Author(s):  
Nasrin Kazem ◽  
Antonio Hurtado ◽  
Fan Sui ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
...  
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Zintl Phase

High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

2014 ◽  
Vol 26 (3) ◽  
pp. 1393-1403 ◽  
Author(s):  
Nasrin Kazem ◽  
Weiwei Xie ◽  
Saneyuki Ohno ◽  
Alexandra Zevalkink ◽  
Gordon J. Miller ◽  
...  
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Zintl Phase

Structural Evolution in the Systems TAl3-xGex (T = Zr, Hf)

2019 ◽  
Vol 289 ◽  
pp. 71-76
Author(s):  
Danylo Maryskevych ◽  
Yaroslav O. Tokaychuk ◽  
Roman E. Gladyshevskii
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Crystal Structures ◽  
Structural Evolution ◽  
Structure Type ◽  
Ternary Compounds ◽  
Pearson Symbol ◽  
The Family ◽  
Binary Compounds ◽  
High Temperature Modification

The crystal structures of the binary compounds ZrAl3 and HfAl3 at 600°C belong to the structure type ZrAl3 (Pearson symbol tI16, space group I4/mmm, a = 4.00930(11), c = 17.2718(7) Å for ZrAl3 and a = 3.9849(3), c = 17.1443(15) Å for HfAl3). Substitution of Ge atoms for Al atoms in ZrAl3 and HfAl3 led to the formation of the ternary compounds ZrAl2.52(1)Ge0.48(1) and HfAl2.40(1)Ge0.60(1), respectively, where the latter is probably part of a solid solution extending from the high-temperature modification of HfAl3. The crystal structures belong to the tetragonal structure type ht-TiAl3 (tI8, I4/mmm, a = 3.92395(11), c = 9.0476(4) Å for ZrAl2.52Ge0.48 and a = 3.9021(2), c = 8.9549(8) Å for HfAl2.40Ge0.60). The structure types ZrAl3 and ht-TiAl3 are both members of the family of close-packed structures.

THERMOELECTRIC PROPERTIES OF Ti-DOPED SiC/TiCx COMPOSITE SYNTHESIZED BY TPPP METHOD

2000 ◽  
Vol 14 (04) ◽  
pp. 131-138 ◽  
Author(s):  
HONG CHEN ◽  
YUZHE YIN ◽  
YUANJIN HE
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Interstitial Impurities ◽  
Plastic Phase ◽  
Phase Process

To improve thermoelectric properties, we attempt to dope Ti into SiC-based composite by transient plastic phase process (TPPP) method. The final result is composed of the functional phase SiC and the reinforcement phases TiC x and TiSi 2. The process of doping is the diffusion of Ti in TiC x solid–solution into SiC grain at high temperature. When the initial SiC is α-type of 5 μm size, the Seebeck coefficient S is less than 10 μV/K at room temperature. SEM photograph shows the reason being that doping is very weak. We change the initial SiC to the β-type of 90 nm size to aid doping. It is observed that S can be significantly improved to 46.3 μV/K at room temperature. When the temperature rises, the improvement is even greater. Measurements of the lattice parameter of β- SiC show that the parameter parallel to the Si–C layer is almost unchanged and the parameter perpendicular to the Si–C layer increases by about 0.48%, which demonstrated that Ti has been successfully doped into the SiC grain and exists as interstitial impurities.

Influence of defect distribution on the thermoelectric properties of FeNbSb based materials

2018 ◽  
Vol 20 (21) ◽  
pp. 14441-14449 ◽  
Author(s):  
Shuping Guo ◽  
Kaishuai Yang ◽  
Zhi Zeng ◽  
Yongsheng Zhang
Keyword(s):  
Solid Solution ◽  
Phase Separation ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Defect Distribution ◽  
Cooperative Effects

Cooperative effects of a solid solution and phase separation could strongly scatter phonons and improve the performance of thermoelectric materials.

scholarly journals Seebeck and Figure of Merit Enhancement by Rare Earth Doping in Yb14-xRExZnSb11 (x = 0.5)

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 731 ◽  
Author(s):  
Elizabeth Kunz Wille ◽  
Navtej Grewal ◽  
Sabah Bux ◽  
Susan Kauzlarich
Keyword(s):  
Solid Solution ◽  
Rare Earth ◽  
High Temperature ◽  
Figure Of Merit ◽  
Structure Type ◽  
Rare Earth Doping ◽  
Metallic Behavior ◽  
Metal Compounds ◽  
Kondo System ◽  
P Type

Yb14ZnSb11 has been of interest for its intermediate valency and possible Kondo designation. It is one of the few transition metal compounds of the Ca14AlSb11 structure type that show metallic behavior. While the solid solution of Yb14Mn1-xZnxSb11 shows an improvement in the high temperature figure of merit of about 10% over Yb14MnSb11, there has been no investigation of optimization of the Zn containing phase. In an effort to expand the possible high temperature p-type thermoelectric materials with this structure type, the rare earth (RE) containing solid solution Yb14-xRExZnSb11 (RE = Y, La) was investigated. The substitution of a small amount of 3+ rare earth (RE) for Yb2+ was employed as a means of optimizing Yb14MnSb11 for use as a thermoelectric material. Yb14ZnSb11 is considered an intermediate valence Kondo system where some percentage of the Yb is formally 3+ and undergoes a reduction to 2+ at ~85 K. The substitution of a 3+ RE element could either replace the Yb3+ or add to the total amount of 3+ RE and provides changes to the electronic states. RE = Y, La were chosen as they represent the two extremes in size as substitutions for Yb: a similar and much larger size RE, respectively, compared with Yb3+. The composition x = 0.5 was chosen as that is the typical amount of RE element that can be substituted into Yb14MnSb11. These two new RE containing compositions show a significant improvement in Seebeck while decreasing thermal conductivity. The addition of RE increases the melting point of Yb14ZnSb11 so that the transport data from 300 K to 1275 K can be collected. The figure of merit is increased five times over that of Yb14ZnSb11 and provides a zT ~0.7 at 1275 K.

scholarly journals Thermal Stability and Thermoelectric Properties of NaZnSb

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 48 ◽  
Author(s):  
Volodymyr Gvozdetskyi ◽  
Bryan Owens-Baird ◽  
Sangki Hong ◽  
Julia Zaikina
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Structural Changes ◽  
Theoretical Calculations ◽  
Sodium Hydride ◽  
Structure Type ◽  
X Ray Diffraction ◽  
Plasma Sintering ◽  
Semiconductor Behavior ◽  
Spark Plasma

A layered Zintl antimonide NaZnSb (PbClF or Cu2Sb structure type; P4/nmm) was synthesized using the reactive sodium hydride NaH precursor. This method provides comprehensive compositional control and facilitates the fast preparation of high-purity samples in large quantities. NaZnSb is highly reactive to humidity/air and hydrolyzes to NaOH, ZnO, and Sb in aerobic conditions. On the other hand, NaZnSb is thermally stable up to 873 K in vacuum, as no structural changes were observed from high-temperature synchrotron powder X-ray diffraction data in the 300–873 K temperature range. The unit cell expansion upon heating is isotropic; however, interatomic distance elongation is not isotropic, consistent with the layered structure. Low- and high-temperature thermoelectric properties were measured on pellets densified by spark plasma sintering. The resistivity of NaZnSb ranges from 11 mΩ∙cm to 31 mΩ∙cm within the 2–676 K range, consistent with heavily doped semiconductor behavior, with a narrow band gap of 0.23 eV. NaZnSb has a large positive Seebeck coefficient (244 μV∙K−1 at 476 K), leading to the maximum of zT of 0.23 at 675 K. The measured thermoelectric properties are in good agreement with those predicted by theoretical calculations.

Synthesis, Crystal Structure and Thermoelectric Properties of β-K2Bi8Se13 Solid Solutions

2003 ◽  
Vol 793 ◽  
Author(s):  
Theodora Kyratsi ◽  
Duck Young Chung ◽  
Jeff S. Dyck ◽  
Ctirad Uher ◽  
Sangeeta Lal ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Band Gaps ◽  
Solid Solution Series ◽  
Type K ◽  
Type Character ◽  
P Type

ABSTRACTSolid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The thermoelectric performance as well as preliminary high temperature measurements suggest the potential of these materials for high temperature applications.

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