Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

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The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Microelectronic Engineering ◽

10.1016/j.mee.2015.02.027 ◽

2015 ◽

Vol 138 ◽

pp. 86-90 ◽

Cited By ~ 14

Author(s):

Pi-Chun Juan ◽

Jyh-Liang Wang ◽

Tsang-Yen Hsieh ◽

Cheng-Li Lin ◽

Chia-Ming Yang ◽

...

Keyword(s):

Thin Films ◽

Nonvolatile Memory ◽

Ferroelectric Thin Films ◽

Memory Applications ◽

Electrical Characterizations

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(Invited) Programmable Metallization Cells in Memory and Switching Applications

ECS Transactions ◽

10.1149/05805.0047ecst ◽

2013 ◽

Vol 58 (5) ◽

pp. 47-52 ◽

Cited By ~ 10

Author(s):

M. N. Kozicki ◽

P. Dandamudi ◽

H. J. Barnaby ◽

Y. Gonzalez-Velo

Keyword(s):

Programmable Metallization Cells ◽

Metallization Cells

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Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

MRS Proceedings ◽

10.1557/proc-541-579 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 1

Author(s):

Tingkai Li ◽

Fengyan Zhang ◽

Sheng Teng Hsu

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Chemical Vapor ◽

Dielectric Constants ◽

Memory Devices ◽

Leakage Currents ◽

Fatigue Characteristics ◽

Ferroelectric Memory ◽

Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

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Characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition for non-volatile memory applications

Thin Solid Films ◽

10.1016/s0040-6090(00)01235-9 ◽

2000 ◽

Vol 375 (1-2) ◽

pp. 200-204 ◽

Cited By ~ 6

Author(s):

Xinhua Zhu ◽

Yiming Liu ◽

Zhenghua An ◽

Tao Zhu ◽

Zhuangchun Wu ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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X-ray Absorption Spectroscopy Study of TiO2–x Thin Films for Memory Applications

The Journal of Physical Chemistry C ◽

10.1021/jp511739h ◽

2015 ◽

Vol 119 (8) ◽

pp. 4362-4370 ◽

Cited By ~ 18

Author(s):

D. Carta ◽

G. Mountjoy ◽

A. Regoutz ◽

A. Khiat ◽

A. Serb ◽

...

Keyword(s):

Thin Films ◽

Absorption Spectroscopy ◽

Spectroscopy Study ◽

X Ray ◽

Memory Applications ◽

X Ray Absorption

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SFM characterization of SrBi2Ta2O9 thin films for nanoscale memory applications

Integrated Ferroelectrics ◽

10.1080/10584589908228465 ◽

1999 ◽

Vol 27 (1-4) ◽

pp. 159-169 ◽

Cited By ~ 5

Author(s):

A. Gruverman ◽

K. Hironaka ◽

Y. Ikeda ◽

K. M. Satyalakshmi ◽

A. Pignolet ◽

...

Keyword(s):

Thin Films ◽

Memory Applications

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MnBi Thin Films: Physical Properties and Memory Applications

Journal of Applied Physics ◽

10.1063/1.1656875 ◽

1968 ◽

Vol 39 (8) ◽

pp. 3916-3927 ◽

Cited By ~ 141

Author(s):

D. Chen ◽

J. F. Ready ◽

E. Bernal G.

Keyword(s):

Thin Films ◽

Physical Properties ◽

Memory Applications

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Resistive switching in diamondoid thin films

Scientific Reports ◽

10.1038/s41598-020-76093-3 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

A. Jantayod ◽

D. Doonyapisut ◽

T. Eknapakul ◽

M. F. Smith ◽

W. Meevasana

Keyword(s):

Thin Film ◽

Thin Films ◽

Transport Properties ◽

Resistive Switching ◽

Electrical Transport ◽

Hysteresis Curve ◽

Applied Potential ◽

Electrical Transport Properties ◽

Non Volatile Memory ◽

Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

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