Characterization of boron nitride phase transformations in the Li–B–N system under high pressure and high temperature

2015 ◽  
Vol 644 ◽  
pp. 888-892 ◽  
Author(s):  
W. Guo ◽  
Y. Shi ◽  
P. Yang ◽  
H.A. Ma ◽  
X. Jia ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Phase Transformations ◽  
Nitride Phase

scholarly journals Multianvil High-Pressure/High-Temperature Synthesis and Characterization of multiferroic HP-Co3TeO6

2021 ◽  
Author(s):  
Gunter Heymann ◽  
Elisabeth Selb ◽  
Toni Buttlar ◽  
Oliver Janka ◽  
Martina Tribus ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Type Structure ◽  
Synthesis And Characterization ◽  
Temperature Synthesis ◽  
Space Group ◽  
Crystal System ◽  
High Temperature Synthesis ◽  
High Pressure High Temperature

By high-pressure/high-temperature multianvil synthesis a new high-pressure (HP) phase of Co3TeO6 was obtained. The compound crystallizes in the acentric trigonal crystal system of the Ni3TeO6-type structure with space group R3...

scholarly journals High-pressure synthesis and characterization of the non-centrosymmetric scandium borate ScB6O9(OH)3

2020 ◽  
Vol 75 (6-7) ◽  
pp. 597-603
Author(s):  
Birgit Fuchs ◽  
Hubert Huppertz
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure High Temperature ◽  
Structure Solution ◽  
Temperature Experiment ◽  
Pressure Synthesis

AbstractThe non-centrosymmetric scandium borate ScB6O9(OH)3 was obtained through a high-pressure/high-temperature experiment at 6 GPa and 1473 K. Single-crystal X-ray diffraction revealed that the structure is isotypic to InB6O9(OH)3 containing borate triple layers separated by scandium layers. The compound crystallizes in the space group Fdd2 with the lattice parameters a = 38.935(4), b = 4.4136(4), and c = 7.6342(6) Å. Powder X-ray diffraction and vibrational spectroscopy were used to further characterize the compound and verify the proposed structure solution.

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Phase transformations in solid C60 at high-pressure-high-temperature treatment and the structure of 3D polymerized fullerites

1996 ◽  
Vol 220 (1-3) ◽  
pp. 149-157 ◽  
Author(s):  
V.D. Blank ◽  
S.G. Buga ◽  
N.R. Serebryanaya ◽  
G.A. Dubitsky ◽  
S.N. Sulyanov ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Phase Transformations ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
High Pressure High Temperature
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